Fabrication and Electrical Characteristics of Single Electron Tunneling Devices Based on Si Quantum Dots Prepared by Plasma Processing (<Special Issue> Quantum Dot Structures)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-06-30
著者
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小田 俊理
東工大工
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小田 俊理
東京工業大学量子ナノエレクトロニクス研究センター
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DUTTA Amit
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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ODA Shunri
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Dutta A
Tokyo Inst. Technol. Tokyo Jpn
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Dutta Amit
Research Center For Quantum Effect Electronics And Department Of Physical Electronics Tokyo Institut
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Masuda Kohzoh
Material Science Tsukuba University
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Oda S
Tokyo Inst. Technol. Tokyo Jpn
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Oda Shunri
Research Center For Quantum Effect Electronics And Department Of Physical Electronics Tokyo Institut
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Oda Shunri
The Graduate School At Nagatsuta Tokyo Institute Of Technology
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KIMURA Masao
Research Center for Quantum Effect Electronics and Department of Physical Electronics, Tokyo Institu
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HONDA Yoshiaki
Research Center for Quantum Effect Electronics and Department of Physical Electronics, Tokyo Institu
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OTOBE Masanori
Research Center for Quantum Effect Electronics and Department of Physical Electronics, Tokyo Institu
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ITOH Akira
Research Center for Quantum Effect Electronics and Department of Physical Electronics, Tokyo Institu
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Kimura M
Murata Mfg. Co. Ltd.
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Honda Yoshiaki
Research Center For Quantum Effect Electronics And Department Of Physical Electronics Tokyo Institut
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Kimura M
Department Of Electrical Engineering Faculty Of Engineering Nagaoka University Of Technology
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Itoh A
Ricoh Co. Ltd. Miyagi Jpn
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Miyamura Kazuo
Department Of Applied Chemistry Faculty Of Engineering The University Of Tokyo
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Otobe M
Research Center For Quantum Effect Electronics And Department Of Physical Electronics Tokyo Institut
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Itoh A
Tokyo Inst. Technol. Tokyo Jpn
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