Internal Q-Switching in n-Type GaAs Lasers under Electron Beam Excitation
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1971-09-05
著者
-
Masuyama Akio
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
-
KAWABE Mitsuo
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
-
MASUDA Kohzoh
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
-
NAMBA Susumu
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
-
Namba S
Research Center For Extreme Materials And Department Of Electrical Engineering Osaka University
-
Kawabe Mitsuo
Faculty Of Engineering Science Osaka University
-
Masuda Kohzoh
Material Science Tsukuba University
-
Masuda Kohzoh
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
-
Masuda Kohzoh
Department Of Electric Engineering Faculty Of Engineering Science Osaka University
-
Namba Susumu
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
-
Namba S
Riken The Institute Of Physical And Chemical Research
関連論文
- Internal Q-Switching in n-Type GaAs Lasers under Electron Beam Excitation
- Abnormal Laser Emission from Electron Beam Excited GaAs
- Laser Surface Cleaning in Air: Mechanisms and Applications
- Ion Beam Etching of InP. II. Reactive Etching with Halogen-Based Source Gases
- Ion Beam Etching of InP. I. Ar Ion Beam Etching and Fabrication of Grating for Integrated Optics
- Fabrication and Electrical Characteristics of Single Electron Tunneling Devices Based on Si Quantum Dots Prepared by Plasma Processing ( Quantum Dot Structures)
- Selective Etching of Hydrogenated Amorphous Silicon by Hydrogen Plasma ( Plasma Processing)
- Low-Energy Ion-Beam Irradiation Effects on Two-Dimensional Electron Gas in Modulation-Doped AlGaAs/ GaAs Heterostructure : Micro/nanofabrication and Devices
- Low-Energy Ion-Beam Irradiation Effects on Two-Dimensional Electron Gas in Modulation-Doped AlGaAs/GaAs Heterostructure
- Anderson Localization and Universal Conductance Fluctuations with Spin-Orbit Interactions in δ-Doped GaAs Films and Wires
- Phase Coherence Length in Planar Doped Thin GaAs Wires Fabricated by Ion Beam Etching : Microfabrication and Physics
- Phase Coherence Length in Planar Doped Thin GaAs Wires Fabricated by Ion Beam Etching
- Fabrication of Periodic Structures in GaAs by Focused-Ion-Beam Implantation : Microfabrication and Physics
- Fabrication of Periodic Structures in GaAs by Focused-Ion-Beam Implantation
- 40 nm Width Structure of GaAs Fabricated by Fine Focused Ion Beam Lithography and Chlorine Reactive Ion Etching : Techniques, Instrumentations and Measurement
- FIB Exposure Characteristics of LB Film
- Ridge Type Microfabrication by Maskless Ion Implantation of Si into SiO_2 Film
- 30 nm Line Fabrication on PMMA Resist by Fine Focused Be Ion Beam
- Electric Conduction Of Unpaired Electrons in Some Organic Single Crystals
- Enhanced Diffusion and Lattice Location of Indium and Gallium Implanted in Silicon
- The Characteristics of Ion-Beam-Induced Spontaneous Etching of GaAs by Low-Energy Focused Ion Beam Irradiation : Focused Ion Beam Process
- The Characteristics of Ion-Beam-Induced Spontaneous Etching of GaAs by Low-Energy Focused Ion Beam Irradiation
- Low Energy Focused Ion Beam System and Application to Low Damage Microprocess : Etching and Deposition Technology
- Low Energy Focused Ion Beam System and Application to Low Damage Microprocess
- Ion Beam Assisted Deposition of Tungsten on GaAs
- Induced Defects in GaAs Etched by Low Energy Ions in Electron Beam excited Plasma(EBEP) System : Etching and Deposition Technology
- Ion Beam Assisted Maskless Etching of GaAs by 50 keV Focused Ion Beam
- Magnetotransport in One-Dimensional Lateral Surface Superlattice Fabricated by Low-Energy Argon Ion Irradiation
- Single Particle Relaxation Times from Shubnikov-de Haas Oscillations in Antidot Structures
- Maskless Etching of AN Using Focused Ion Beam
- Maskless Ion Beam Assisted Etching of Si Using Chlorine Gas
- Fine-Tolerance Resonator Applications of Bismuth-Layer-Structured Ferroelectric Ceramics
- Temperature Dependence of Piezoelectric Properties of Grain-Oriented CaBi_4Ti_4O_ Ceramics
- Energy Trapping Characteristics of Bismuth Layer Structured Compound CaBi_4Ti_4O_
- Minute Viscoelastic Observation in Isotropic-Nematic Phase Transition of 7CB with a Thousandth Kelvin Resolution
- Liquid Phase Epitaxial Growth of (3GaAs)_x{(3ZnSe)_y(Ga_2Se_3)_}_ Alloy
- Temperature Characteristics of (Ba_Sr_x)_2NaNb_5O_ Ceramics
- LPE Growth of (3GaAs)_x{(3ZnSe)_y(Ga_2Se_3)_}_ Alloy
- White-Light-Emitting Organic Electroluminescent Device Using Lanthanide Complexes
- Blue Electroluminescent 1, 2, 4-Triazole Derivative
- Growth of GaAsP on GaP by Compositional Conversion
- liquid Phase Epitaxy of GaAs by Yo-yo Solute Feeding Method
- Electric Conduction of α, α'-Diphenyl-β-Picrylhydrazyl Single Crystal
- Electric Conduction of α, α'-Diphenyl-β-Picrylhydrazyl in Benzene
- Dynamic Response of Surface-Stabilized Ferroelectric Liquid Crystals : Effect of Alignment Films
- New High Current Low Energy Ion Source
- Fabrication of Superconducting Weak Links by Electron Beam Lithography and Ion Implantation
- Dry Etching of Nb and Fabrication of Nb Variable-Thickness-Bridges
- Fabrication and DC Characteristics of Nb Vertical Type Microbridges
- Distributed-Feedback Dye Laser in Blue Region
- Conversion from GaAs to GaAsP by Annealing a GaAs Layer on GaP in Ga-As-P Solutiom
- High-Frequency Shear Viscoelastic Study of Cyanobiphenyl Series in the Smectic A and Nematic Mesophases
- Distribution Profiles and Annealing Characteristics of Defects in GaAs Induced by Low-Energy FIB Irradiation : Electrical Properties of Condensed Matter
- Tunnel Gap Imaging Investigation of Voltage Dependence of Molecular Images Obtained by Scanning Tunneling Microscope
- High-Performance Current-Voltage Measurement System for Scanning Tunneling Spectroscopy of Deposited Molecules
- Turnnel Gap Imaging Study of Highly Oriented Pyrolytic Graphite Using Scanning Tunneling Microscope
- Residual Local Strain in Gallium Arsenide Induced by Laser Pyrolytic Etchingin CCl_4 Atmosphere
- Local Temperature Rise during Laser Induced Etching of Gallium Arsenide in SiCl_4 Atmosphere
- Maskless Dry Etching of Gallium Arsenide with a Submicron Line-Width by Laser Pyrolysis in CCl_4 Gas Atmosphere
- Shubnikov-de Haas Oscillations in a Narrow GaAs/AlGaAs Wire
- Aperiodic Conductance Fluctuations in a Narrow GaAs/AlGaAs Wire
- Fabrication of CdTe Optical Waveguide by LPE Using the Boat-Slide Technique
- Electrical and Magnetic Properties of Phthalocyanine Iodine Charge Transfer Complex
- Electrical Conduction in Phthalocyanine Single Crystals
- Photoconductivity of Copper Phthalocyanine Single Crystals
- Shallow Donor Clusters in InP
- A Loss Mechanism in Optical Waveguides Fabricated by Ion Implantation in Fused Quartz
- E.S.R. of Irradiated DPPH Protected by Polystyrene
- Increase in T_c of Nb Films Implanted with N^+_2
- Electrical and Magnetic Properties of DPPH Iodine Charge Transfer Complex
- Uniaxial Stress Effects on Electrical Conductivity of DPPH Single Crystal
- Ion-Implanted Arsenic Profiles in GaAs Encapsulated by SiO_2 and Si_3N_4
- Control of T_c for Niobium by N Ion Implantation
- Lattice-Site Locations of Tin and Antimony Implanted in Gallium Phosphide
- Depth Distribution of Defects in Mg-Ion and Cd-Ion Implanted GaAs
- Photoluminescence Study of Cd-Ion Implanted n-GaAs
- Photoluminescence and Electrical Measurements on Manganese Ion-Implanted GaAs
- Lattice Site Location of Cadmium and Tellurium Implanted in Gallium Arsenide
- Activation Energies of Formation and Diffusion of As Vacancy in GaAs Measured by Photoluminescence
- Comparison between Concentration Profiles of Arsenic Implanted in Silicon Measured by Means of Neutron Activation Analysis and Radioactive Ion Implantation
- Hall Effect Measurements of Zn Implanted GaAs
- Effects of Implantation Temperature on Lattice Location of Tellurium Implanted in Gallium Arsenide
- ESR Studies on Defects and Amorphous Phase in Silicon Produced by Ion Implantation
- Dose Dependence of Photoluminescence Degradation in Te Ion-Implanted GaAs
- Lattice Location of Sb Implanted in GaAs Single Crystals
- Diffusion of Defects in Low Temperature Ion Implanted GaAs
- Concentration Profiles of Room Temperature Ion Implanted Indium in Silicon
- Enhanced Diffusion of Ion Implanted Sb in Silicon
- Stimulated Emission from CdS Thin Films Excited by N_2 Laser
- Electroluminescence of Green Light Region in Doped Anthracene
- Low Temperature Magnetoresistance of a Quasi-Ballistic Narrow Wire Confined by Split Metal Gates
- Size Dependence of Universal Conductance Fluctuations in Narrow N^+ -GaAs Wires : II. LOW TEMPERATURE PROPERTIES OF SOLIDS : Localization, Mesoscopic Systems
- Dynamic Behavior of 30-ps Pulsed-Laser Annealing in Ion-Implanted Si
- Ballistic Electron Transmission in GaAs-AlGaAs Crossed Wire Junctions
- Ballistic Electron Transport on Periodic and Quasi-Periodic Triangular Lattices of Scatterers : Micro/nanofabrication and Devices
- Ballistic Electron Transport on Periodic and Quasi-Periodic Triangular Lattices of Scatterers
- Electron Focusing in a Widely Tapered Cross Junction
- Ion Beam Assisted Deposition of Metal Organic Films Using Focused Ion Beams
- Direct Writing of Gratings by Electron Beam in Poly(metyl methacrylate) Optical Waveguides
- Dimensional Crossover of Electron-Electron Scattering in GaAs-AlGaAs Wires