ESR Studies on Defects and Amorphous Phase in Silicon Produced by Ion Implantation

概要

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Paramagnetic defects have been studied over a wide dose range. At doses>6×10^<14> P^+/cm^2, only one isotropic spectrum of g=2.0062±0.0004 which characterizes a continuous amorphous layer is observed. At doses between 0.1 and 6.0×10^<14> P^+/cm^2, four types of paramagnetic defect centers coexist. One is a new center that shows motional effect at around 200 K and has a very short spin-lattice relaxation time. The others are the isotropic center with g≒2.006 which originates from isolated amorphous regions, the Si-B2 and -P3 centers and the spin-lattice relaxation time of these centers increases in this order. The spin-lattice relaxation time of the new center is between that of the isotropic center (〜10^<-6> sec) and the Si-B2. Among the isolated defect centers, the new and Si-B2 centers become dominant instead of the Si-P3 center with increasing dose to 〜10^<14> P^+/cm^2. Three types of motional effects are considered from the observed ESR spectra.
社団法人応用物理学会の論文
1973-09-05