Characterization of Directly Deposited Silicon Films Using Low-Energy Focused Ion Beam

概要

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Direct deposition of silicon and silicon-oxide films using a 100 eV Si^<2+> focused ion beam (FIB) was performed and the dependence of the film composition on the irradiation interval (time between consecutive exposures of the pixel) and the oxygen pressure was investigated. From the Auger electron spectroscopy (AES) measurement, it was found that the amount of oxygen incorporated in the deposited film increased with increasing irradiation interval and oxygen pressure, and that the oxygen was chemically bonded with silicon. For a deposition performed in an oxygen atmosphere at a pressure of 8 × 10^<-6> Torr, oxygen inclusion was about 80% of thermally oxidized SiO_2. Resistivity of the deposited silicon-oxide film was about 2 MΩ・cm. The present result suggests that both pure Si and silicon-oxide films can be formed using the same low-energy Si^<2+> FIB direct deposition only by changing the deposition atmosphere.
社団法人応用物理学会の論文
1996-12-30