Schottky Barrier on n-Type Al_<0.14>Ga_<0.86>N Grown by Organometalic Vapor Phase Epitaxy

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概要

• 論文の詳細を見る

• Schottky barrier diodes of Au-n-Al_<0.14>Ga_<0.86>N grown by Organometallic Vapor Phase Epitaxy were obtained and characterized between 77 K and 373 K. Under forward bias the value of the ideality parameter n=1.41 and the threshold voltage is 0.75 V. The reverse bias leak current is below 10^<-10> A on a reverse bias of 10 V. The barrier height (Φ_B) was determined to be (1.17±0.03) eV and (1.3±0.05) eV by the current-voltage and the capacitance-voltage measurement repectively.

• 社団法人応用物理学会の論文
• 1995-12-15

著者

• Hiramatsu Kazumasa

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University

• SAWAKI Nobuhiko

  Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya

• NAKAYAMA Hisashi

  Department of Surgery, Nihon University Nerimahikarigaoka Hospital

• KHAN Mohammad

  Department of Anatomy and Histology, Faculty of Veterinary Science, Bangladesh Agricultural Universi

• Nakayama Hideki

  Faculty Of Engineering Shizuoka University

• Khan Mohammad

  Department Of Electronics Nagoya University

• Sawaki N

  Nagoya Univ. Nagoya Jpn

• DETCHPROHM Theeradetch

  Department of Electrical and Electronic Engineering, Meijo University

• Sawaki Nobuhiko

  Department Of Electronics Faculty Of Engineering Nagoya University

• Nakayama H

  Fuji Xerox Co. Ltd. Ebina Jpn

• Hiramatsu K

  Department Of Electrical And Electronic Engineering. Faculty Of Engineering Mie University

• Hiramatsu Kazumasa

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University

• Nakayama Hisashi

  Department Of Digestive Surgery Nihon University School Of Medicine

• Detchprohm T

  High-tech Research Center Meljo University

• Khan Mohammad

  Department Of Anatomy And Histology Faculty Of Veterinary Science Bangladesh Agricultural University

• Sawaki Nobuhiko

  Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan

• SAWAKI Nobuhiko

  Department of Electronics, Nagoya University

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