A Detailed Investigation of the Growth Conditions of Gallium Nitride Nanorods by Hydride Vapor Phase Epitaxy
スポンサーリンク
概要
- 論文の詳細を見る
We studied GaN nanorods grown by hydride vapour phase epitaxy processes to identify optimal growth conditions that yield nanorods appropriate for use in nanodevices. The growth temperature was varied over the range 625--670 °C, and the morphology of the samples changed with increasing growth temperature. GaN nanorods formed at growth temperatures of 645 °C on a Si(111) substrate. At a fixed growth temperature of 645 °C, the HCl:NH3 gas flow ratio was adjusted from 1:37 to 1:41. GaN nanorods with a small diameter of 26 nm formed at a HCl:NH3 ratio of 1:38. Individual GaN nanorods clearly grew along the axial direction, perpendicular to the substrate. Cathodoluminescence measurements at room temperature revealed a red shift as the acceleration energy was increased to 15 keV, possibly associated with the internal electric field.
- 2012-01-25
著者
-
Ahn Hyung
Department Of Applied Physics Korea Maritime University
-
Sawaki Nobuhiko
Department Of Electronics Faculty Of Engineering Nagoya University
-
YI Sam
Department of Applied Physics, Korea Maritime University
-
Yu Young-Moon
Industry--University Cooperation Foundation, Pukyong National University, Busan 608-739, Korea
-
Huh Yoon
Department of Analysis and Assessment, Research Institute of Industrial Science and Technology, Pohang, Gyeongbuk 790-330, Korea
-
Kim Min
Department of Applied Science, Korea Maritime University, Busan 606-791, Korea
-
Shin Min
Department of Applied Science, Korea Maritime University, Busan 606-791, Korea
-
Jeon Hun
Department of Applied Science, Korea Maritime University, Busan 606-791, Korea
-
Ahn Hyung
Department of Applied Science, Korea Maritime University, Busan 606-791, Korea
-
Yi Sam
Department of Applied Science, Korea Maritime University, Busan 606-791, Korea
-
Sawaki Nobuhiko
Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan
-
KIM Min
Department of Animal Science and Biotechnology, College of Agriculture and Life Science, Chungnam National University, Daejeon 305–764, Korea
関連論文
- Long-Term Clinical Course of Patients With Isolated Myocardial Bridge
- 1,2,3,4,6-Penta-O-galloyl-β-D-glucose Protects Splenocytes against Radiation-Induced Apoptosis in Murine Splenocytes
- Lack of Correlation Between QTc Dispersion and Morning Blood Pressure Surge in Recently Diagnosed Essential Hypertensive Patients
- Role of PKC-δ during Hypoxia in Heart-Derived H9c2 Cells
- Protein Kinase C Inhibitors Attenuate Protective Effect of High Glucose against Hypoxic Injury in H9c2 Cardiac Cells
- Selective Area Growth of GaN on Si Substrate Using SiO_2 Mask by Metalorganic Vapor Phase Epitaxy
- Thin-Layer Ablation of Metals and Silicon by Femtosecond Laser Pulses for Application to Surface Analysis
- P3-IS-73 Ruptured tubal pregnancy caused by inactive chorionic villi presenting with negative serum β-hCG(Group93 Reproduction3,International Session)
- P1-IS-79 Association studies of 5-HTT, DRD4 genes polymorphisms with fear during childbirth in Korean pregnant women
- P1-IS-54 Choledochal cyst diagnosed and conservatively treated during pregnancy
- P1-IS-53 Prenatal 3D-ultrasound diagnosis of Exencephaly associated with partial trisomy 2p and distal 5p deletion
- Myrothenones A and B, Cyclopentenone Derivatives with Tyrosinase Inhibitory Activity from the Marine-Derived Fungus Myrothecium sp.
- Transmission Electron Microscopy Study of the Microstructure in Selective-Area-Grown GaN and an AIGaN/GaN Heterostructure on a 7-Degree Off-Oriented (001) Si Substrate : Structure and Machanical and Thermal Properties of Condensed Matter
- Aerobic Denitrification of Pseudomonas putida AD-21 at Different C/N Ratios(ENVIRONMENTAL BIOTECHNOLOGY)
- Study on the Ophthalmic Diseases in ICR Mice and BALB/c Mice
- Spontaneous Ophthalmic Diseases in 586 New Zealand White Rabbits
- In vivoならびにIn vitroで成熟させた異なる生殖周期に採取した犬の卵母細胞中のグルタチオン濃度(臨床繁殖学)
- Crystal Orientation Fluctuation of Epitaxial-Lateral-Overgrown GaN with W Mask and SiO_2 Mask Observed by Transmission Electron Diffraction and X-Ray Rocking Curves
- Ectopically Erupting First Permanent Molar in Chronic Myelogenous Leukemia
- Systemic Inflammatory Syndrome and Hepatic Inflammatory Cell Infiltration Caused by an Interleukin-6 Producing Pheochromocytoma
- Comparative Study of C-V and Transconductance of a Si δ-Doped GaAs FET Structure
- Picosecond Photoluminescence Study of Relaxation Phenomena of Hot Electrons in a Quasi-One-Dimensional Structure
- On the Electron Mobility in Quasi-One-Dimensional Structures Fabricated by Holographic Lithography and Wet Chemical Etching
- Edge and Self-Activated High Band Emission of ZnS_xSe_ Single Crystal Epitaxial Layers
- Thermodynamical Analyses and Luminescence Properties of Vapor-Grown ZnS_xSe_
- Photoluminescence Decay Properties of Indium Doped ZnS
- VPE Growth of ZnS Incorporating Indium on GaP
- Raman Scattering of InGaAsP Lattice-Matched to GaAs in the Region of Immiseibility
- Analysis of Compositional Variation at Initial Transient Time in LPE Growth of InGaAsP/GaAs System
- Characterization of Interface Instability in InGaAsP LPE Growth on GaAs by Fourier Analysis
- Effect of AlN Buffer Layer on AlGaN/α-Al_2O_3 Heteroepitaxial Growth by Metalorganic Vapor Phase Epitaxy : Condensed Matter
- Theory of Tunneling into Impurity Band
- Mixing/Resonance of Electronic States and Optical Nonlinearity in a GaAs/AlGaAs Asymmetric Triple Quantum Well Structure
- The Effects of Famciclovir and Epidural Block in the Treatment of Herpes Zoster
- Optical and Crystalline Properties of Epitaxial-Lateral-Overgrown-GaN Using Tungsten Mask by Hydride Vapor Phase Epitaxy
- A Hierarchical Study of Even-Denominator Filling Fractions in Quantum Hall Structure
- Raman Scattering in ZnS_xSe_ Alloys
- Characterization of ZnS_xSe1_x/(100)Gap Heterointerface by Raman Scattering : Semiconductors and Semiconductor Devices
- Raman Scattering Study of InGaN Grown by Metalorganic Vapor Phase Epitaxy on (0001) Sapphire Substrates : Optical Properties of Condensed Matter
- A Biomechanical Study of Artificial Cervical Discs Using Computer Simulation
- Selective Area Growth of GaN Using Tungsten Mask by Metalorganic Vapor Phase Epitaxy
- Characterization of the Shallow and Deep Levels in Si Doped GaN Grown by Metal-Organic Vapor Phase Epitaxy
- Optical Gain in Wurtzite ZnO/ZnMgO Quantum Well Lasers
- Fabrication of the CuInGaSe Pellet and Characterization of the Thin Film
- Continued Fraction Representation Reilluminated in Formulation of Acoustic-Phonon-Induced Magneto-Optical Transition in Semiconductors
- Examination of the Validity of the Continued-Fraction-Based Theory of Cyclotron-Resonance Lineshape for Electron Systems Interacting with Acoustic Phonons
- Structural Change of InGaN Nanostructures Grown by Mixed-Source Hydride Vapor Phase Epitaxy
- A Simple Algebraic Technique in the Generalized Continued-Fraction Representation : General Matter and Statistical Physics
- Age-related changes in the microarchitecture of collagen fibrils in the articular disc of the rat temporomandibular joint
- Computer Simulation of Tunneling Transfer and Formation of Resonant States in a GaAs/AlGaAs 2 Dimensional Electron Gas Disk
- Reduction of Efficiency Droop in Semipolar $(1\bar{1}01)$ InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates
- Si-Doping in GaN Grown by Metal-Organic Vapor Phase Epitaxy Using Tetraethylsilane
- Electrical Transport Properties of p-GaN
- Schottky Barrier on n-Type Al_Ga_N Grown by Organometalic Vapor Phase Epitaxy
- LPE Growth and Surface Morphology of In_xGa_As_yP_ (y≤0.01) on (100) GaAs
- Characterization of the InGaN/GaN Multi-Quantum-Wells Light-Emitting Diode Grown on Patterned Sapphire Substrate with Wide Electroluminescence Spectrum
- Buried Tungsten Metal Structure Fabricated by Epitaxial-Lateral-Overgrown GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy
- Gradual tilting of crystallographic orientation and configuration of dislocations in GaN selectively grown by vapour phase epitaxy methods
- Growth of Single Crystal Al_xGa_N Films on Si Substrates by Metalorganic Vapor Phase Epitaxy
- Lattice-Mismatch-Induced Deep Level in In_xGa_AS_yP_ (0≦y≦0.41) Grown on (100) GaAs
- Effect of Lattice Mismatch on Electric Properties near Heterointerface of In_xGa_As_yP_(y
- Hot Electron and Real Space Transfer in Double-Quantum-Well Structures
- UV Photoemission Study of AlGaN Grown by Metalorganic Vapor Phase Epitaxy
- Raman Intensity of Phonon Modes in InGaAsP Quaternary Alloys Grown on (100) InP in the Region of Immiscibility
- Raman Scattering Study of InGaAsP Quaternary Alloys Grown on InP in the Immiscible Region
- Reconstruction of Posterolateral Rotatory Instability in the Elbow : A Case Report
- Electron-beam-induced-current investigation of GaN/AlGaN/Si heterostructures using scanning transmission electron microscopy
- Application of electron holography to the determination of contact potential difference in an AlGaN/AlN/Si heterostructure
- Theory of Plasma Spreading Velocity in a Thyristor
- Tunneling Spectroscopic Study of the Impurity Band of (000) Valley of Germanium
- Tunneling through Band Tail States
- Uniaxial Stress Effect on Subsidiary Band Minima of GaSb from Zero Bias Conductance Anomaly
- Uniaxial Stress Effect on (000) and (100) Conduction-Band Minima of Germanium
- Plasma Spreading and Turn-On Delay in a Power Thyristor
- Fabrication of GaN Hexagonal Pyramids on Dot-Patterned GaN/Sapphire Substrates via Selective Metalorganic Vapor Phase Epitaxy
- Theory of Cyclotron Resonance Lineshape Revisited : Condensed Matter and Statistical Physics
- Measurement of Minority-Carrier Drift Velocity in Quantum Well Structures by Phololuminescence Intensity Correlation Method
- Electron Mobility and Drag Effect in p-Type Silicon
- Measurement of Electron Mobility in p-Si by Time-of-Flight Technique
- Measurement of Minority-Carrier Diffusion Coefficient in Silicon by AC Photo-Current Method
- Series Resistance in n-GaN/AlN/n-Si Heterojunction Structure
- Selective Growth of Microscale GaN Pyramids on Apex of GaN Pyramids (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
- Magnetic Scattering in Germanium Tunnel Diode
- Crystal Orientation of GaN Nanostructures Grown on AlO and Si(111) with a Zr Buffer Layer (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
- Characterization of Electrical Properties of Micro-Schottky Contacts on Epitaxial Lateral Overgrowth GaN
- Ultraviolet Light Emitting Diode with High Quality Epilayer Grown by Hydride Vapor Phase Epitaxy (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
- Selective Growth of GaN Rods on the Apex of GaN Pyramids by Metal Organic Vapor Phase Epitaxy
- Development of the Hybrid Conjugated Polymer Solar Cell Based on GaN Quantum Dots
- Nonphosphor White Light Emitting Diodes by Mixed-Source Hydride Vapor Phase Epitaxy
- A Detailed Investigation of the Growth Conditions of Gallium Nitride Nanorods by Hydride Vapor Phase Epitaxy
- Formation Mechanism of AlGaAs/GaAs Stripe Structure Made of ($11n$)A Facets in Selective Molecular-Beam Epitaxy
- Confinement and Transfer of a Two-Dimensional Wave Packet under Crossed Electric and Magnetic Fields
- Well-Aligned Carbon Nanotubes Synthesized by Thermal Chemical Vapor Deposition of Acetylene on Cobalt Nanoparticles
- Metalorganic Vapor Phase Epitaxy of Thick InGaN on Sapphire Substrate
- Selective Growth of GaN/AlGaN Microstructures by Metalorganic Vapor Phase Epitaxy
- Carbon Incorporation on ($1\bar{1}01$) Facet of AlGaN in Metal Organic Vapor Phase Epitaxy
- Enhancement of Electron Mobility in Quasi-One-Dimensional Structure
- Growth of GaN on Metallic Compound Graphite Substrate Using Hydride Vapor Phase Epitaxy
- Publisher's Note: "Well-Aligned Carbon Nanotubes Synthesized by Thermal Chemical Vapor Deposition of Acetylene on Cobalt Nanoparticles"
- Continued Fraction Representation Reilluminated in Formulation of Acoustic-Phonon-Induced Magneto-Optical Transition in Semiconductors