Crystal Orientation of GaN Nanostructures Grown on AlO and Si(111) with a Zr Buffer Layer (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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Ahn Hyung
Department Of Applied Physics Korea Maritime University
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YI Sam
Department of Applied Physics, Korea Maritime University
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Kim Minji
Department Of Applied Biological Chemistry Graduate School Of Agricultural And Life Sciences The Uni
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Shin Min
Department of Applied Science, Korea Maritime University, Busan 606-791, Korea
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Jeon Hunsoo
Department of Applied Science, Korea Maritime University, Busan 606-791, Korea
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Sawaki Nobuhiko
Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan
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Yu Young
LED-MCT R&BD Center at Pukyong National University, Busan 608-737, Korea
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Choi Seok-Cheol
Korea Basic Science Institute, Daegu 702-701, Korea
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Lee Sang-Geul
Korea Basic Science Institute, Daegu 702-701, Korea
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