Selective Growth of GaN/AlGaN Microstructures by Metalorganic Vapor Phase Epitaxy
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概要
- 論文の詳細を見る
A GaN/AlGaN double heterostructure was fabricated on the $(1\bar{1}01)$ facets of a GaN triangular structure prepared by selective area growth by metalorganic vapor phase epitaxy. The photoluminescence (PL) and cathode luminescence (CL) spectra were investigated to characterize the structure. It was found that the PL peak wavelength due to the GaN quantum well is dependent on the well thickness. However, the Al composition of the AlGaN layer is dependent on the position on the $(1\bar{1}01)$ facet. The anomalous gradient of the composition is attributed to the difference in the diffusion coefficients of Al and Ga on the surface.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-03-30
著者
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KAWAGUCHI Yasutoshi
Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya
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Kato Tomonobu
Department Of Electronics School Of Engineering Nagoya University Chikusa-ku Nagoya
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Sawaki Nobuhiko
Department Of Electronics Faculty Of Engineering Nagoya University
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Yamaguchi Masahito
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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HONDA Yoshio
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University
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Honda Yoshio
Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan
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Kawaguchi Yasutoshi
Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan
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Kato Tomonobu
Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan
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Sawaki Nobuhiko
Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan
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YAMAGUCHI Masahito
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University
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Honda Yoshio
Department of Chemistry, Faculty of Science, Kanazawa University
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