Series Resistance in n-GaN/AlN/n-Si Heterojunction Structure
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概要
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A nominally nondoped GaN was grown on an (111)Si substrate using an AlN intermediate layer and the electrical resistance of a GaN/AlN/Si heterojunction was studied in relation to the growth conditions of the AlN intermediate layer. Cross-sectional reflection electron microscopy (REM) images showed that the AlN intermediate layer is of pyramid-like microcrystals with a thin area in between. A clear correlation was found between the film thickness in the thin area and the apparent resistance of a sample. The growth conditions of the AlN intermediate layer were studied to achieve a low electrical resistance, maintaining the mirror flat surface morphology of a top GaN layer.
- 2006-05-15
著者
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Honda Yoshio
Department Of Electronics Nagoya University
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Sawaki Nobuhiko
Department Of Electronics Faculty Of Engineering Nagoya University
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KONDO Hiroyuki
Department of Applied Chemistry and BioTechnology, Fukui University
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Yamaguchi Masahito
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Kondo Hiroyuki
Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan
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Koide Norikatsu
Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan
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Koide Norikatsu
Department of Electronics and Akasaki Research Center, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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HONDA Yoshio
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University
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Sawaki Nobuhiko
Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan
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YAMAGUCHI Masahito
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University
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Honda Yoshio
Department of Chemistry, Faculty of Science, Kanazawa University
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