Phase Controlled Scanning Force Microscope
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-09-01
著者
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Honda Y
Department Of Electronics Nagoya University
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Honda Yoshio
Department Of Electronics School Of Engineering Nagoya University Chikusa-ku Nagoya
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Honda Y
Tokyo Inst. Technol. Tokyo Jpn
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Hosaka S
Hitachi Ltd. Tokyo Jpn
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Hosaka Sumio
Advanced Research Laboratory Hitachi Ltd.
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Hosaka S
Gunma Univ. Kiryu Jpn
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HONDA Yukio
Central Research Laboratory, Hitachi Ltd.
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Honda Yoshio
Department Of Electronics Nagoya University
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Honda Y
Hitachi Ltd. Kokubunji‐shi Jpn
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Honda Y
Tsukuba Research Laboratory Sumitomo Chemical Co. Ltd.
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Kikukawa A
Hitachi Ltd. Tokyo Jpn
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Kikukawa Atsushi
Central Research Laboratory Hitachi Ltd.
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Kikukawa Atsushi
Advanced Research Laboratory Hitachi Ltd.
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IMURA Ryo
Advanced Research Laboratory, Hitachi Ltd.
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Imura Ryo
Advanced Research Laboratory Hitachi Ltd.
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Honda Yukio
Central Research Laboratory Hitachi Ltd.
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IMURA Ryo
Advanced Research Institute, Hitachi Ltd.
関連論文
- Selective Growth of GaN/AlGaN Microstructures by Metalorganic Vapor Phase Epitaxy
- Selective Area Growth of GaN on Si Substrate Using SiO_2 Mask by Metalorganic Vapor Phase Epitaxy
- Transmission Electron Microscopy Study of the Microstructure in Selective-Area-Grown GaN and an AIGaN/GaN Heterostructure on a 7-Degree Off-Oriented (001) Si Substrate : Structure and Machanical and Thermal Properties of Condensed Matter
- Scintigraphic Detection of Regional Disruption of the Adrenergic Nervous System in Sarcoid Heart disease
- In-line Optical Lever System for Ultrasmall Cantilever Displacement Detection
- Nanometer Recording on Graphite and Si Substrate Using an Atomic Force Microscope in Air
- A Magnetic Force Microscope Using an Optical Lever Sensor and Its Application to Longitudinal Recording Media
- Transmission Electron Microscopy Investigation of Dislocations in GaN Layer Grown by Facet-Controlled Epitaxial Lateral Overgrowth : Semiconductors
- Crystalline and Optical Properties of ELO GaN by HVPE Using Tungsten Mask(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
- Crystal Orientation Fluctuation of Epitaxial-Lateral-Overgrown GaN with W Mask and SiO_2 Mask Observed by Transmission Electron Diffraction and X-Ray Rocking Curves