Transmission Electron Microscopy Investigation of Dislocations in GaN Layer Grown by Facet-Controlled Epitaxial Lateral Overgrowth : Semiconductors

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2001-04-01

著者

• Miyake Hideto

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University

• Hiramatsu Kazumasa

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University

• Honda Y

  Department Of Electronics Nagoya University

• Honda Yoshio

  Department Of Electronics School Of Engineering Nagoya University Chikusa-ku Nagoya

• Honda Y

  Tokyo Inst. Technol. Tokyo Jpn

• HONDA Yoshiaki

  Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd.

• Honda Yoshio

  Department Of Electronics Nagoya University

• Honda Y

  Hitachi Ltd. Kokubunji‐shi Jpn

• Honda Y

  Tsukuba Research Laboratory Sumitomo Chemical Co. Ltd.

• Honda Yoshiaki

  Tsukuba Research Laboratory Sumitomo Chemical Co. Ltd.

• IYECHIKA Yasushi

  Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd.

• MAEDA Takayoshi

  Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd.

• Miyake Hideto

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University

• Maeda T

  Tsukuba Research Laboratory Sumitomochemical Co. Ltd.

• Hiramatsu Kazumasa

  Division Of Electrical And Electronic Engineering Graduate School Of Engineering Mie University

• Hiramatsu Kazumasa

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University

• Hiramatsu K

  Ntt Corp. Tsukuba‐shi Jpn

• Iyechika Yasushi

  Tsukuba Research Laboratory Sumitomochemical Co. Ltd.

関連論文

• Selective Area Growth of III-Nitride and Their Application for Emitting Devices
• Characterization of deep electron levels of AlGaN grown by MOVPE(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
• Characterization of deep electron levels of AlGaN grown by MOVPE(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
• Simulation of Compositional Variation in Liquid Phase Epitaxy InGaP Using a Two Dimensional Model
• Selective Growth of GaN/AlGaN Microstructures by Metalorganic Vapor Phase Epitaxy
• Selective Area Growth of GaN on Si Substrate Using SiO_2 Mask by Metalorganic Vapor Phase Epitaxy
• Transmission Electron Microscopy Study of the Microstructure in Selective-Area-Grown GaN and an AIGaN/GaN Heterostructure on a 7-Degree Off-Oriented (001) Si Substrate : Structure and Machanical and Thermal Properties of Condensed Matter
• Improved Contact Resistance in AlGaN/GaN Heterostructures by Titanium Distribution Control at the Metal-Semiconductor Interface
• Scintigraphic Detection of Regional Disruption of the Adrenergic Nervous System in Sarcoid Heart disease
• A Magnetic Force Microscope Using an Optical Lever Sensor and Its Application to Longitudinal Recording Media
• 0.21-fJ GaAs DCFL Circuits Using 0.2-μm Y-Shaped Gate AlGaAs/InGaAs E/D-HJFETs (Special Issue on Ultra-High-Speed IC and LSI Technology)
• A 1.3V Supply Voltage AlGaAs/InGaAs HJFET SCFL D-FF Operating at up to 10Gbps (Special Issue on Ultra-High-Speed LSIs)
• Transmission Electron Microscopy Investigation of Dislocations in GaN Layer Grown by Facet-Controlled Epitaxial Lateral Overgrowth : Semiconductors
• Crystalline and Optical Properties of ELO GaN by HVPE Using Tungsten Mask(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
• Crystal Orientation Fluctuation of Epitaxial-Lateral-Overgrown GaN with W Mask and SiO_2 Mask Observed by Transmission Electron Diffraction and X-Ray Rocking Curves
• Structure of Self-Assembled Monolayers from Amphiphilic Diacetylene Derivatives on Indium-Tin Oxide
• Alignment of Surface-Stabilized Ferroelectric Liquid Crystal by the Self-Assembled Monolayers of Amphiphilic Diacetylene Derivatives
• Continuous-Wave Operation of a Lateral Current Injection Ridge Waveguide AlGaAs/GaAs Laser with a Selectively-Doped Heterostructure
• In-Situ RHEED Monitoring of Hydrogen Plasma Cleaning on Semiconductor Surfaces : Beam-Induced Physics and Chemistry
• In-Situ RHEED Monitoring of Hydrogen Plasma Cleaning on Semiconductor Surfaces
• Incidence Angle Dependence in Hydrogen Plasma Processing of Semiconductor Surfaces : Beam Induced Physics and Chemistry
• Al-Pd-Re Icosahedral Quasicrystals and Their Low Electrical Conductivities
• Toward Insulating Quasicrystalline Alloy in Al-Pd-Re Icosahedral Phase
• Electrical Transport Properties of Al-Cu-Os Icosahedral Quasicrystal
• Recorded Magnetization Structures and Noise Characteristics of CoCr Alloy Longitudinal Thin-Film Media
• Investigation of Thermal Annealing Process of GaN Layer on Sapphire by Molecular Dynamics
• Investigation of Initial Growth Process of GaN Film on Sapphire Using Computational Chemistry
• Investigation of Growth Process of GaN Film on Sapphire by Computational Chemistry
• Computational Studies on GaN Surface Polarity and InN/GaN Heterostructures by Density Functional Theory and Molecular Dynamics
• Study on Surface Polarity of GaN by Density Functional Theory and Molecular Dynamics
• Phase Controlled Scanning Force Microscope
• High Resolution of Magnetic Force Microscope Image using a Just-on-Surface Magnetic Force Microscope
• Study of Magnetic Stray Field Measurement on Surface Using New Force Microscope
• Simultaneous Observation of 3-Dimensional Magnetic Stray Field and Surface Structure Using New Force Microscope
• Magnetic and Microstructural Properties of Co-Cr Film Fabricated by Continuous Roll Coater : Magnetism, Magnetic Materials Devices
• Observation of Magnetization Structure on Co-Cr Perpendicular Magnetic Recording Media by Bitter and Electron Holography Methods
• Comparison of Microstructure of Cross-Sectional CoCr Thin Film Specimens Prepared by Fracture, Microtome, and Ion-Beam Thinning Methods
• Microstructure of CoCr Thin Films Prepared by Sputtering
• Raman Scattering of InGaAsP Lattice-Matched to GaAs in the Region of Immiseibility
• Analysis of Compositional Variation at Initial Transient Time in LPE Growth of InGaAsP/GaAs System
• Characterization of Interface Instability in InGaAsP LPE Growth on GaAs by Fourier Analysis
• Effects of Carbon Intermediate Layer on Structural and Magnetic Properties of Double-Layered Perpendicular Magnetic Recording Media(Special Issue on Recent Progress in Information Storage Technology)
• Effect of Nonmagnetic Underlayer on Structural and Magnetic Properties of CoCr-Alloy Thin Film Media(Special Issue on Selected Papers from the 5th Asian Symposium on Information Storage Technology)
• Distribution of Threading Dislocations in Epitaxial Lateral Overgrowth GaN by Hydride Vapor-Phase Epitaxy Using Mixed Carrier Gas of H_2 and N_2(Semiconductors)
• Optical and Crystalline Properties of Epitaxial-Lateral-Overgrown-GaN Using Tungsten Mask by Hydride Vapor Phase Epitaxy
• Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase Epitaxy
• Relaxation Process of the Thermal Strain in the GaN/α-Al_2O_3 Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain
• Metalorganie Vapor Phase Epitaxial Growth and Properties of GaN/Al_Ga_N Layered Structures
• Cathodoluminescence Properties of Undoped and Zn-Doped Al_xGa_N Grown by Melalorganic Vapor Phase Epitaxy
• P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
• Heteroepitaxial Growth and the Effect of Strain on the Luminescent Properties of GaN Films on (1120) and (0001) Sapphire Substrates : Condensed Matter
• Raman Scattering Study of InGaN Grown by Metalorganic Vapor Phase Epitaxy on (0001) Sapphire Substrates : Optical Properties of Condensed Matter
• Monoclonal Antibody #3-9-16 Recognizes One of the Two Isoforms of Rabies Virus Matrix Protein That Exposes Its N-Terminus on the Virion Surface
• Variation of Surface Potentials of Si-Doped Al_xGa_N (O
• ECL-Compatible Low-Power-Consumption 10-Gb/s GaAs 8 : 1 Multiplexer and 1 : 8 Demultiplexer (Special Issue on High-Frequency/speed Devices in the 21st Century)
• Selective Area Growth of GaN Using Tungsten Mask by Metalorganic Vapor Phase Epitaxy
• Phase Relations in the CuGa_xIn_Se_2-In Pseudobinary System
• Characterization of the Shallow and Deep Levels in Si Doped GaN Grown by Metal-Organic Vapor Phase Epitaxy
• Fabrication of Deep-Ultraviolet-Light-Source Tube Using Si-Doped AlGaN
• Spectrum Analysis of Recorded Magnetization Using Magnetic Force Microscopy
• Future Technology Trends on Magneto-Optical Recording
• Raman Scattering Spectroscopy of Residual Stresses in Epitaxial AlN Films
• Characterization of GaN-Based Schottky Barrier Ultraviolet (UV) Detectorsin the UV and Vacuum Ultraviolet (VUV) Region Using Synchrotron Radiation : Semiconductors
• Reduction of Efficiency Droop in Semipolar $(1\bar{1}01)$ InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates
• Field Emission from GaN Self-Organized Nanotips
• Antireflection Effect of Self-OOrganized GaN Nanotip Structure from Ultraviolet to Visible Region : Semiconductors
• Influence of Ge and Si on Reactive Ion Etching of GaN in Cl_2 Plasma : Semiconductors
• Formation of GaN Self-Organized Nanotips by Reactive Ion Etching : Semiconductors
• In Situ Monitoring of GaN Reactive Ion Etching by Optical Emission Spectroscopy : Semiconductors
• Si-Doping in GaN Grown by Metal-Organic Vapor Phase Epitaxy Using Tetraethylsilane
• Electrical Transport Properties of p-GaN
• Schottky Barrier on n-Type Al_Ga_N Grown by Organometalic Vapor Phase Epitaxy
• Improved-Brooks Mobility Formula for Disorder Scattering in Semiconductor Alloys
• LPE Growth and Surface Morphology of In_xGa_As_yP_ (y≤0.01) on (100) GaAs
• Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy
• Freestanding GaN Substrate by Advanced Facet-Controlled Epitaxial Lateral Overgrowth Technique with Masking Side Facets
• X-Ray Analysis of Twist and Tilt of GaN Prepared by Facet-Controlled Epitaxial Lateral Overgrowth (FACELO)
• Buried Tungsten Metal Structure Fabricated by Epitaxial-Lateral-Overgrown GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy
• Gradual tilting of crystallographic orientation and configuration of dislocations in GaN selectively grown by vapour phase epitaxy methods
• Effects of Reactor Pressure on Epitaxial Lateral Overgrowth of GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy
• Growth of Single Crystal Al_xGa_N Films on Si Substrates by Metalorganic Vapor Phase Epitaxy
• Lattice-Mismatch-Induced Deep Level in In_xGa_AS_yP_ (0≦y≦0.41) Grown on (100) GaAs
• Effect of Lattice Mismatch on Electric Properties near Heterointerface of In_xGa_As_yP_(y
• Electron-beam-induced-current investigation of GaN/AlGaN/Si heterostructures using scanning transmission electron microscopy
• Application of electron holography to the determination of contact potential difference in an AlGaN/AlN/Si heterostructure
• Phase Diagram of the CuGaS_2-In Pseudobinary System
• Growth of CuGaS_2 Single Crystals by Traveling Heater Method
• Growth of Bulk CuGaS_2 Single Crystals Using Solution Bridgman Method
• Single Crystal Growth of Cu-III-VI_2 Semiconductors by THM
• Effects of Substrate Plane on the Growth of High Quality AlN by Hydride Vapor Phase Epitaxy
• Deep Electronic Levels of AlxGa1-xN with a Wide Range of Al Composition Grown by Metal–Organic Vapor Phase Epitaxy
• Series Resistance in n-GaN/AlN/n-Si Heterojunction Structure
• AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates
• Photoluminescence due to Inelastic Biexciton Scattering from an Al.Ga.N Ternary Alloy Epitaxial Layer at Room Temperature
• Microstructure of AlN Grown on a Nucleation Layer on a Sapphire Substrate
• Growth and Characterization of AlGaN Multiple Quantum Wells for Electron-Beam Target for Deep-Ultraviolet Light Sources
• Photoluminescence due to Inelastic Biexciton Scattering from an Al_Ga_N Ternary Alloy Epitaxial Layer at Room Temperature
• Growth of Cu2ZnSnS4 Single Crystal by Traveling Heater Method
• Suppression of Crack Generation Using High-Compressive-Strain AlN/Sapphire Template for Hydride Vapor Phase Epitaxy of Thick AlN Film
• Reaction Route of GaN Powder Formation via Sintering Gallium Ethylenediamine Tetraacetic Acid Complexes in Ammonia

もっと見る 閉じる

スポンサーリンク