Influence of Ge and Si on Reactive Ion Etching of GaN in Cl_2 Plasma : Semiconductors
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概要
- 論文の詳細を見る
We investigated the influence of Ge and Si in Cl_2 plasma on reactive ion etching (RIE) of GaN. The etched surfaces of GaN were smooth, and high etch rates of 0.63 μm/min and 0.41 μm/min were obtained using a Ge plate and a Si plate, respectively. A rough surface was formed for the quartz plate without the Ge plate or Si plate. Optical emission spectroscopy revealed optical emissions related to GeCl^+_x ions in Cl_2 plasma with the Ge plate, to SiClx+ ions with the Si plate and to Cl+ ions without the Ge or Si plate. It is considered that the GeCl^+_x ions and SiCl^+_x ions for RIE of GaN play an important role in obtaining a smooth etched surface of GaN, and that the high-energy Cl^+ ion severely damages the GaN surface.
- 社団法人応用物理学会の論文
- 2002-01-15
著者
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Miyake Hideto
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
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Hiramatsu Kazumasa
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
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Miyake Hideto
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Hiramatsu K
Department Of Electrical And Electronic Engineering. Faculty Of Engineering Mie University
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Hiramatsu Kazumasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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YOSHIDA Harumasa
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
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URUSHIDO Tatsuhiro
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
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Yoshida H
Department Of Electrical And Electronic Engineering. Faculty Of Engineering Mie University
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Urushido Tatsuhiro
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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