Characterization of GaN-Based Schottky Barrier Ultraviolet (UV) Detectorsin the UV and Vacuum Ultraviolet (VUV) Region Using Synchrotron Radiation : Semiconductors

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概要

• 論文の詳細を見る

• Characterization of GaN-based Schottky barrier ultraviolet (UV) detectors with a comb-shaped electrode using synchrotron radiation (hν = 2.2-30eV, λ = 41-563nm) is described. Below hν = 8.0eV (λ > 155nm), the detectors are available without any photoemission of GaN and Au electrode, Under application of reverse bias, the responsivity is increased to 0.05A/W at -0.4V. The photocurrent is controlled by reverse bias. On the other hand, above hν = 8.0eV (λ < 155nm), the responsivity spectra are dominated by photoemissions of Au and GaN. These results show that these Schottky type detectors with mesa structures are effective to detect vacuum ultraviolet (VUV)-UV light (155 < λ < 360nm).

• 社団法人応用物理学会の論文
• 2001-04-15

著者

• Hiramatsu Kazumasa

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University

• FUKUI Kazutoshi

  Department of Electrical and Electronics Engineering,Faculty of Engineering,Fukui University

• Yamaguchi M

  Facult. Eng. Univ. Chiba

• Yamaguchi M

  Toyota Technological Inst. Nagoya Jpn

• Kotoh Masahiro

  Photonics Research Laboratory Mitsubishi Cable Industries Ltd.

• Hiramatsu Kazumasa

  Division Of Electrical And Electronic Engineering Graduate School Of Engineering Mie University

• Hiramatsu K

  Department Of Electrical And Electronic Engineering. Faculty Of Engineering Mie University

• Hiramatsu Kazumasa

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University

• Hiramatsu K

  Ntt Corp. Tsukuba‐shi Jpn

• TADATOMO Kazuyuki

  Photonics Research Laboratory, Mitsubishi Cable Industries, LTD.

• OHUCHI Youichiro

  Photonics Research Laboratory, Mitsubishi Cable Industries, LTD.

• Fukui Kazutoshi

  Department Of Vacuum Uv Photoscience Institute For Molecular Science

• Fukui Kazutoshi

  Department Of Applied Physics Fukui University

• MOTOGAITO Atsushi

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University

• YAMAGUCHI Motoo

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University

• HAMAMURA Yutaka

  Sagamihara Plant, Nikon Co., Ltd.

• Ohuchi Youichiro

  Photonics Research Laboratory Mitsubishi Cable Industries Ltd.

• Tadatomo Kazuyuki

  Photonics Research Laboratory Mitsubishi Cable Industries Ltd.

• Motogaito Atsushi

  Division Of Electrical And Electronic Engineering Graduate School Of Engineering Mie University

• Hamamura Yutaka

  Sagamihara Plant Nikon Co. Ltd.

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