Miyake Hideto | Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University

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著作論文

Selective Area Growth of III-Nitride and Their Application for Emitting Devices
Characterization of deep electron levels of AlGaN grown by MOVPE(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
Characterization of deep electron levels of AlGaN grown by MOVPE(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
Transmission Electron Microscopy Investigation of Dislocations in GaN Layer Grown by Facet-Controlled Epitaxial Lateral Overgrowth : Semiconductors
Crystal Orientation Fluctuation of Epitaxial-Lateral-Overgrown GaN with W Mask and SiO_2 Mask Observed by Transmission Electron Diffraction and X-Ray Rocking Curves
Distribution of Threading Dislocations in Epitaxial Lateral Overgrowth GaN by Hydride Vapor-Phase Epitaxy Using Mixed Carrier Gas of H_2 and N_2(Semiconductors)
Optical and Crystalline Properties of Epitaxial-Lateral-Overgrown-GaN Using Tungsten Mask by Hydride Vapor Phase Epitaxy
Variation of Surface Potentials of Si-Doped Al_xGa_N (O
Selective Area Growth of GaN Using Tungsten Mask by Metalorganic Vapor Phase Epitaxy
Phase Relations in the CuGa_xIn_Se_2-In Pseudobinary System
Fabrication of Deep-Ultraviolet-Light-Source Tube Using Si-Doped AlGaN
Raman Scattering Spectroscopy of Residual Stresses in Epitaxial AlN Films
Field Emission from GaN Self-Organized Nanotips
Antireflection Effect of Self-OOrganized GaN Nanotip Structure from Ultraviolet to Visible Region : Semiconductors
Influence of Ge and Si on Reactive Ion Etching of GaN in Cl_2 Plasma : Semiconductors
Formation of GaN Self-Organized Nanotips by Reactive Ion Etching : Semiconductors
In Situ Monitoring of GaN Reactive Ion Etching by Optical Emission Spectroscopy : Semiconductors
Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy
Freestanding GaN Substrate by Advanced Facet-Controlled Epitaxial Lateral Overgrowth Technique with Masking Side Facets
X-Ray Analysis of Twist and Tilt of GaN Prepared by Facet-Controlled Epitaxial Lateral Overgrowth (FACELO)
Buried Tungsten Metal Structure Fabricated by Epitaxial-Lateral-Overgrown GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy
Effects of Reactor Pressure on Epitaxial Lateral Overgrowth of GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy
Phase Diagram of the CuGaS_2-In Pseudobinary System
Growth of CuGaS_2 Single Crystals by Traveling Heater Method
Growth of Bulk CuGaS_2 Single Crystals Using Solution Bridgman Method
Single Crystal Growth of Cu-III-VI_2 Semiconductors by THM
Effects of Substrate Plane on the Growth of High Quality AlN by Hydride Vapor Phase Epitaxy
Deep Electronic Levels of AlxGa1-xN with a Wide Range of Al Composition Grown by Metal–Organic Vapor Phase Epitaxy
Photoluminescence due to Inelastic Biexciton Scattering from an Al.Ga.N Ternary Alloy Epitaxial Layer at Room Temperature
Microstructure of AlN Grown on a Nucleation Layer on a Sapphire Substrate
Growth and Characterization of AlGaN Multiple Quantum Wells for Electron-Beam Target for Deep-Ultraviolet Light Sources
Photoluminescence due to Inelastic Biexciton Scattering from an Al_Ga_N Ternary Alloy Epitaxial Layer at Room Temperature
Growth of Cu2ZnSnS4 Single Crystal by Traveling Heater Method
Suppression of Crack Generation Using High-Compressive-Strain AlN/Sapphire Template for Hydride Vapor Phase Epitaxy of Thick AlN Film
Reaction Route of GaN Powder Formation via Sintering Gallium Ethylenediamine Tetraacetic Acid Complexes in Ammonia
Transmission Electron Microscopy Characterization of Position-Controlled InN Nanocolumns
Metalorganic Vapor Phase Epitaxy Growth and Study of Stress in AlGaN Using Epitaxial AlN as Underlying Layer
Growth of Thick AlN Layer by Hydride Vapor Phase Epitaxy
Selective Area Growth of Semipolar (20\bar{2}1) and (20\bar{2}\bar{1}) GaN Substrates by Metalorganic Vapor Phase Epitaxy
AlN Grown on a- and n-Plane Sapphire Substrates by Low-Pressure Hydride Vapor Phase Epitaxy
Realization of Maskless Epitaxial Lateral Overgrowth of GaN on 3C-SiC/Si Substrates
Cathodoluminescence Study of Optical Inhomogeneity in Si-Doped AlGaN Epitaxial Layers Grown by Low-Pressure Metalorganic Vapor-Phase Epitaxy
AlN Grown on a- and n-Plane Sapphire Substrates by Low-Pressure Hydride Vapor Phase Epitaxy (Special Issue : Recent Advances in Nitride Semiconductors)
Metalorganic Vapor Phase Epitaxy Growth and Study of Stress in AlGaN Using Epitaxial AlN as Underlying Layer

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