SAWAKI Nobuhiko | Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya

スポンサーリンク

概要

関連著者

もっと見る

著作論文

Selective Growth of GaN/AlGaN Microstructures by Metalorganic Vapor Phase Epitaxy
Selective Area Growth of GaN on Si Substrate Using SiO_2 Mask by Metalorganic Vapor Phase Epitaxy
Transmission Electron Microscopy Study of the Microstructure in Selective-Area-Grown GaN and an AIGaN/GaN Heterostructure on a 7-Degree Off-Oriented (001) Si Substrate : Structure and Machanical and Thermal Properties of Condensed Matter
Characterization of Electrical Properties of Micro-Schottky Contacts on Epitaxial Lateral Overgrowth GaN
Crystal Orientation Fluctuation of Epitaxial-Lateral-Overgrown GaN with W Mask and SiO_2 Mask Observed by Transmission Electron Diffraction and X-Ray Rocking Curves
Enhancement of Electron Mobility in Quasi-One-Dimensional Structure
Comparative Study of C-V and Transconductance of a Si δ-Doped GaAs FET Structure
Picosecond Photoluminescence Study of Relaxation Phenomena of Hot Electrons in a Quasi-One-Dimensional Structure
On the Electron Mobility in Quasi-One-Dimensional Structures Fabricated by Holographic Lithography and Wet Chemical Etching
Edge and Self-Activated High Band Emission of ZnS_xSe_ Single Crystal Epitaxial Layers
Thermodynamical Analyses and Luminescence Properties of Vapor-Grown ZnS_xSe_
Photoluminescence Decay Properties of Indium Doped ZnS
VPE Growth of ZnS Incorporating Indium on GaP
Raman Scattering of InGaAsP Lattice-Matched to GaAs in the Region of Immiseibility
Analysis of Compositional Variation at Initial Transient Time in LPE Growth of InGaAsP/GaAs System
Characterization of Interface Instability in InGaAsP LPE Growth on GaAs by Fourier Analysis
Effect of AlN Buffer Layer on AlGaN/α-Al_2O_3 Heteroepitaxial Growth by Metalorganic Vapor Phase Epitaxy : Condensed Matter
Theory of Tunneling into Impurity Band
Mixing/Resonance of Electronic States and Optical Nonlinearity in a GaAs/AlGaAs Asymmetric Triple Quantum Well Structure
Optical and Crystalline Properties of Epitaxial-Lateral-Overgrown-GaN Using Tungsten Mask by Hydride Vapor Phase Epitaxy
Raman Scattering in ZnS_xSe_ Alloys
Characterization of ZnS_xSe1_x/(100)Gap Heterointerface by Raman Scattering : Semiconductors and Semiconductor Devices
Raman Scattering Study of InGaN Grown by Metalorganic Vapor Phase Epitaxy on (0001) Sapphire Substrates : Optical Properties of Condensed Matter
Selective Area Growth of GaN Using Tungsten Mask by Metalorganic Vapor Phase Epitaxy
Characterization of the Shallow and Deep Levels in Si Doped GaN Grown by Metal-Organic Vapor Phase Epitaxy
Computer Simulation of Tunneling Transfer and Formation of Resonant States in a GaAs/AlGaAs 2 Dimensional Electron Gas Disk
Si-Doping in GaN Grown by Metal-Organic Vapor Phase Epitaxy Using Tetraethylsilane
Electrical Transport Properties of p-GaN
Schottky Barrier on n-Type Al_Ga_N Grown by Organometalic Vapor Phase Epitaxy
LPE Growth and Surface Morphology of In_xGa_As_yP_ (y≤0.01) on (100) GaAs
Buried Tungsten Metal Structure Fabricated by Epitaxial-Lateral-Overgrown GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy
Gradual tilting of crystallographic orientation and configuration of dislocations in GaN selectively grown by vapour phase epitaxy methods
Growth of Single Crystal Al_xGa_N Films on Si Substrates by Metalorganic Vapor Phase Epitaxy
Lattice-Mismatch-Induced Deep Level in In_xGa_AS_yP_ (0≦y≦0.41) Grown on (100) GaAs
Effect of Lattice Mismatch on Electric Properties near Heterointerface of In_xGa_As_yP_(y

もっと見る

スポンサーリンク