Yamaguchi Masahito | Department Of Electronic Engineering Faculty Of Engineering Osaka University
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概要
関連著者
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Yamaguchi Masahito
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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YAMAGUCHI Masahito
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University
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Sawaki Nobuhiko
Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan
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Sawaki Nobuhiko
Department Of Electronics Faculty Of Engineering Nagoya University
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YAMAGUCHI Masahito
Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya
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Honda Yoshio
Department of Chemistry, Faculty of Science, Kanazawa University
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HONDA Yoshio
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University
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SAWAKI Nobuhiko
Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya
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KAWAGUCHI Yasutoshi
Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya
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Hiramatsu Kazumasa
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University
著作論文
- Selective Area Growth of GaN on Si Substrate Using SiO_2 Mask by Metalorganic Vapor Phase Epitaxy
- Experimental Observation of Intersubband Excitations in Si-Doped GaAs/AlAs Multiple Quantum Wells
- Novel Method of Modulation Spectroscopy for Heterostructures: Electro-Photoreflectance
- Mixing/Resonance of Electronic States and Optical Nonlinearity in a GaAs/AlGaAs Asymmetric Triple Quantum Well Structure
- Optical and Crystalline Properties of Epitaxial-Lateral-Overgrown-GaN Using Tungsten Mask by Hydride Vapor Phase Epitaxy
- Wannier-Stark Localization in Superlattices
- Raman Scattering Study of InGaN Grown by Metalorganic Vapor Phase Epitaxy on (0001) Sapphire Substrates : Optical Properties of Condensed Matter
- Selective Area Growth of GaN Using Tungsten Mask by Metalorganic Vapor Phase Epitaxy
- Drastic Reduction of Dislocation Density in Semipolar ($11\bar{2}2$) GaN Stripe Crystal on Si Substrate by Dual Selective Metal--Organic Vapor Phase Epitaxy
- Computer Simulation of Tunneling Transfer and Formation of Resonant States in a GaAs/AlGaAs 2 Dimensional Electron Gas Disk