Mixing/Resonance of Electronic States and Optical Nonlinearity in a GaAs/AlGaAs Asymmetric Triple Quantum Well Structure

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1998-01-15

著者

• YAMAGUCHI Masahito

  Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya

• SAWAKI Nobuhiko

  Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya

• Ahn Hyung

  Department Of Applied Physics Korea Maritime University

• Ahn Hyung

  Department Of Electronics Nagoya University

• Sawaki Nobuhiko

  Department Of Electronics Faculty Of Engineering Nagoya University

• Sawaki Nobuhiko

  Department Of Electronics Nagoya University

• Yamaguchi Masahito

  Department Of Electronics Nagoya University

• Yamaguchi Masahito

  Department Of Electronic Engineering Faculty Of Engineering Osaka University

• Sawaki Nobuhiko

  Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan

• YAMAGUCHI Masahito

  Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University

関連論文

• Selective Growth of GaN/AlGaN Microstructures by Metalorganic Vapor Phase Epitaxy
• Selective Area Growth of GaN on Si Substrate Using SiO_2 Mask by Metalorganic Vapor Phase Epitaxy
• Transmission Electron Microscopy Study of the Microstructure in Selective-Area-Grown GaN and an AIGaN/GaN Heterostructure on a 7-Degree Off-Oriented (001) Si Substrate : Structure and Machanical and Thermal Properties of Condensed Matter
• Characterization of Electrical Properties of Micro-Schottky Contacts on Epitaxial Lateral Overgrowth GaN
• Crystal Orientation Fluctuation of Epitaxial-Lateral-Overgrown GaN with W Mask and SiO_2 Mask Observed by Transmission Electron Diffraction and X-Ray Rocking Curves
• Enhancement of Electron Mobility in Quasi-One-Dimensional Structure
• Comparative Study of C-V and Transconductance of a Si δ-Doped GaAs FET Structure
• Picosecond Photoluminescence Study of Relaxation Phenomena of Hot Electrons in a Quasi-One-Dimensional Structure
• On the Electron Mobility in Quasi-One-Dimensional Structures Fabricated by Holographic Lithography and Wet Chemical Etching
• Edge and Self-Activated High Band Emission of ZnS_xSe_ Single Crystal Epitaxial Layers
• Thermodynamical Analyses and Luminescence Properties of Vapor-Grown ZnS_xSe_
• Photoluminescence Decay Properties of Indium Doped ZnS
• VPE Growth of ZnS Incorporating Indium on GaP
• Experimental Observation of Intersubband Excitations in Si-Doped GaAs/AlAs Multiple Quantum Wells
• Raman Scattering of InGaAsP Lattice-Matched to GaAs in the Region of Immiseibility
• Analysis of Compositional Variation at Initial Transient Time in LPE Growth of InGaAsP/GaAs System
• Characterization of Interface Instability in InGaAsP LPE Growth on GaAs by Fourier Analysis
• Novel Method of Modulation Spectroscopy for Heterostructures: Electro-Photoreflectance
• Effect of AlN Buffer Layer on AlGaN/α-Al_2O_3 Heteroepitaxial Growth by Metalorganic Vapor Phase Epitaxy : Condensed Matter
• Theory of Tunneling into Impurity Band
• Mixing/Resonance of Electronic States and Optical Nonlinearity in a GaAs/AlGaAs Asymmetric Triple Quantum Well Structure
• The Effects of Famciclovir and Epidural Block in the Treatment of Herpes Zoster
• Optical and Crystalline Properties of Epitaxial-Lateral-Overgrown-GaN Using Tungsten Mask by Hydride Vapor Phase Epitaxy
• A Hierarchical Study of Even-Denominator Filling Fractions in Quantum Hall Structure
• Wannier-Stark Localization in Superlattices
• Raman Scattering in ZnS_xSe_ Alloys
• Characterization of ZnS_xSe1_x/(100)Gap Heterointerface by Raman Scattering : Semiconductors and Semiconductor Devices
• Raman Scattering Study of InGaN Grown by Metalorganic Vapor Phase Epitaxy on (0001) Sapphire Substrates : Optical Properties of Condensed Matter
• A Biomechanical Study of Artificial Cervical Discs Using Computer Simulation
• Selective Area Growth of GaN Using Tungsten Mask by Metalorganic Vapor Phase Epitaxy
• Characterization of the Shallow and Deep Levels in Si Doped GaN Grown by Metal-Organic Vapor Phase Epitaxy
• Fabrication of the CuInGaSe Pellet and Characterization of the Thin Film
• Structural Change of InGaN Nanostructures Grown by Mixed-Source Hydride Vapor Phase Epitaxy
• Erratum: ``Reduction of Efficiency Droop in Semipolar $(1\bar{1}01)$ InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates''
• Drastic Reduction of Dislocation Density in Semipolar ($11\bar{2}2$) GaN Stripe Crystal on Si Substrate by Dual Selective Metal--Organic Vapor Phase Epitaxy
• Age-related changes in the microarchitecture of collagen fibrils in the articular disc of the rat temporomandibular joint
• Computer Simulation of Tunneling Transfer and Formation of Resonant States in a GaAs/AlGaAs 2 Dimensional Electron Gas Disk
• Reduction of Efficiency Droop in Semipolar $(1\bar{1}01)$ InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates
• Si-Doping in GaN Grown by Metal-Organic Vapor Phase Epitaxy Using Tetraethylsilane
• Electrical Transport Properties of p-GaN
• Schottky Barrier on n-Type Al_Ga_N Grown by Organometalic Vapor Phase Epitaxy
• LPE Growth and Surface Morphology of In_xGa_As_yP_ (y≤0.01) on (100) GaAs
• Characterization of the InGaN/GaN Multi-Quantum-Wells Light-Emitting Diode Grown on Patterned Sapphire Substrate with Wide Electroluminescence Spectrum
• Buried Tungsten Metal Structure Fabricated by Epitaxial-Lateral-Overgrown GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy
• Gradual tilting of crystallographic orientation and configuration of dislocations in GaN selectively grown by vapour phase epitaxy methods
• Growth of Single Crystal Al_xGa_N Films on Si Substrates by Metalorganic Vapor Phase Epitaxy
• Lattice-Mismatch-Induced Deep Level in In_xGa_AS_yP_ (0≦y≦0.41) Grown on (100) GaAs
• Effect of Lattice Mismatch on Electric Properties near Heterointerface of In_xGa_As_yP_(y
• Hot Electron and Real Space Transfer in Double-Quantum-Well Structures
• UV Photoemission Study of AlGaN Grown by Metalorganic Vapor Phase Epitaxy
• Raman Intensity of Phonon Modes in InGaAsP Quaternary Alloys Grown on (100) InP in the Region of Immiscibility
• Raman Scattering Study of InGaAsP Quaternary Alloys Grown on InP in the Immiscible Region
• Reconstruction of Posterolateral Rotatory Instability in the Elbow : A Case Report
• Electron-beam-induced-current investigation of GaN/AlGaN/Si heterostructures using scanning transmission electron microscopy
• Application of electron holography to the determination of contact potential difference in an AlGaN/AlN/Si heterostructure
• Theory of Plasma Spreading Velocity in a Thyristor
• Tunneling Spectroscopic Study of the Impurity Band of (000) Valley of Germanium
• Tunneling through Band Tail States
• Uniaxial Stress Effect on Subsidiary Band Minima of GaSb from Zero Bias Conductance Anomaly
• Uniaxial Stress Effect on (000) and (100) Conduction-Band Minima of Germanium
• Plasma Spreading and Turn-On Delay in a Power Thyristor
• Fabrication of GaN Hexagonal Pyramids on Dot-Patterned GaN/Sapphire Substrates via Selective Metalorganic Vapor Phase Epitaxy
• Measurement of Minority-Carrier Drift Velocity in Quantum Well Structures by Phololuminescence Intensity Correlation Method
• Electron Mobility and Drag Effect in p-Type Silicon
• Measurement of Electron Mobility in p-Si by Time-of-Flight Technique
• Measurement of Minority-Carrier Diffusion Coefficient in Silicon by AC Photo-Current Method
• Series Resistance in n-GaN/AlN/n-Si Heterojunction Structure
• AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates
• Selective Growth of Microscale GaN Pyramids on Apex of GaN Pyramids (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
• Magnetic Scattering in Germanium Tunnel Diode
• Crystal Orientation of GaN Nanostructures Grown on AlO and Si(111) with a Zr Buffer Layer (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
• Characterization of Electrical Properties of Micro-Schottky Contacts on Epitaxial Lateral Overgrowth GaN
• Ultraviolet Light Emitting Diode with High Quality Epilayer Grown by Hydride Vapor Phase Epitaxy (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
• Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
• Selective Growth of GaN Rods on the Apex of GaN Pyramids by Metal Organic Vapor Phase Epitaxy
• Development of the Hybrid Conjugated Polymer Solar Cell Based on GaN Quantum Dots
• Nonphosphor White Light Emitting Diodes by Mixed-Source Hydride Vapor Phase Epitaxy
• A Detailed Investigation of the Growth Conditions of Gallium Nitride Nanorods by Hydride Vapor Phase Epitaxy
• Formation Mechanism of AlGaAs/GaAs Stripe Structure Made of ($11n$)A Facets in Selective Molecular-Beam Epitaxy
• Effect of Silicon Doping on the Photoluminescence and Photoreflectance Spectra of Catalyst-Free Molecular Beam Epitaxy--Vapor Liquid Solid Grown GaAs Nanowires on (111)Si Substrate
• Confinement and Transfer of a Two-Dimensional Wave Packet under Crossed Electric and Magnetic Fields
• Metalorganic Vapor Phase Epitaxy of Thick InGaN on Sapphire Substrate
• Selective Growth of GaN/AlGaN Microstructures by Metalorganic Vapor Phase Epitaxy
• Carbon Incorporation on ($1\bar{1}01$) Facet of AlGaN in Metal Organic Vapor Phase Epitaxy
• Enhancement of Electron Mobility in Quasi-One-Dimensional Structure
• Fabrication of InGaN/GaN Multiple Quantum Wells on (1\bar{1}01) GaN
• Effects of Nano- and Microscale SiO
• Growth of GaN on Si(111) Substrates via a Reactive-Sputter-Deposited AlN Intermediate Layer
• GaN Nanowires Grown on a Graphite Substrate by Radio Frequency Molecular Beam Epitaxy
• Thick InGaN Growth by Metal Organic Vapor Phase Epitaxy with Sputtered InGaN Buffer Layer
• Growth Mode and Threading Dislocation Behavior of GaN Films Grown on Patterned Sapphire Substrate with Radial Stripe Pattern
• Stacking Faults and Luminescence Property of InGaN Nanowires
• Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy
• GaN Overgrowth on Thermally Etched Nanoporous GaN Template
• Computer Simulation of Tunneling Transfer and Formation of Resonant States in a GaAs/AlGaAs 2 Dimensional Electron Gas Disk
• Concentration of Deep Level in InxGa1-xAsyP1-y Grown on (100) GaAs by LPE
• Growth of GaN on Metallic Compound Graphite Substrate Using Hydride Vapor Phase Epitaxy
• Stacking Faults and Luminescence Property of InGaN Nanowires (Special Issue : Recent Advances in Nitride Semiconductors)
• Growth Mode and Threading Dislocation Behavior of GaN Films Grown on Patterned Sapphire Substrate with Radial Stripe Pattern
• Thermodynamical Analysis and Luminescence Properties of Vapor-Grown ZnSxSe1-x II—Bypass Flow Effect—

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