Uniaxial Stress Effect on (000) and (100) Conduction-Band Minima of Germanium

概要

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The analysis of the I-V characteristics of a reverse-biased germanium tunnel diode at 4.2°K gives the tunneling density of states of the (000) and (100) valleys of n-type germanium. The effects of <111> uniaxial stress on these valleys were measured and the stress coefficients of the (000) and (100) valleys were determined. Using the known parameters of (111) valleys, the deformation potential constants of these valleys are, E_d^<(000)>=-(6.8±0.7) eV and E_d^<(100)>+1/3E_u^<(100)>=(4.0±0.3) eV, respectivelv. By using the value of the pressure coefficient of the direct energy gap, δE_<gap>(Γ_2'-Γ_<25>')/P=12.5×10^<-12> eV/dyn cm^<-2>, determined by Pollak et at. [F. H. Pollak and M. Cardona: Phys. Rev. 172 (1968) 816] the deformation potential constant of the valence band was also estimated to be a=(2.6±0.7) eV. Furthermore, the pressure coefficient of ?_1-conduction band minima, δE_<gap>(?_1-Γ_<25>')/P=-(1.87±0.4)×10^<-12>eV/dyn cm^<-2>, was obtained.
社団法人応用物理学会の論文
1969-06-05