Transport Mechanism of Alloyed p^+-n Heterojunctions with Relatively Heavy Doping
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概要
- 論文の詳細を見る
An analytical expression for the tunneling current through single-step interface state in the heterojunction has been presented. The calculated result can be compared with the previous theories. The temperature dependences and other parametric variations in the V-I characteristics are discussed. The p^+-n Si-Ge heterojunction is fabricated by alloying in H_2 atmosphere. The analytical solution is in fairly good agreement with the experimental results. In the highly reverse biased region, most of current through the junction is due to the interband tunneling transition in germanium.
- 社団法人応用物理学会の論文
- 1972-02-05
著者
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YOSHIDA AKIRA
Department of Radiological Sciences, Hiroshima Prefectural College of Health Science
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Ido Toshiyuki
Department Of Electrical Engineering Chubu University
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Ido Toshiyuki
Department Of Electronics Faculty Of Engineering Nagoya University
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Arizumi Tetsuya
Department Of Electronic Engineering Faculty Of Engineering Nagoya University
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Yoshida Akira
Department Of Electronics Faculty Of Engineering Nagoya University
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Yoshida Akira
Department Of Cardiology Kyoto National Hospital
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Yoshida Akira
Department Of Agricultural Chemistry Nagoya University
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