Uniaxial Stress Effect on p^+-n Si-Ge Alloyed Heterojunction Characteristics
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概要
- 論文の詳細を見る
V-I characteristics of a p^+-n Si-Ge alloyed heterojunction were investigated at room temperature by applying a uniaxial stress up to 3.7×10^9 dyn/cm^2 perpendicular to the junction plane. The changes in the applied voltage under constant current conditions become larger in order for <011>, <211>, <111> directions of the applied stress. The change in the applied voltage decreases with increasing the stress for <111> axis. For <011> and <211> it increases at first to a maximum value and then begins to decrease. The stress effect on V-I characteristics of the p^+-n, Si-Ge heterojunction is explained satisfactorily by considering the energy shifts in band edges.
- 社団法人応用物理学会の論文
- 1972-10-05
著者
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YOSHIDA AKIRA
Department of Radiological Sciences, Hiroshima Prefectural College of Health Science
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Ido Toshiyuki
Department Of Electrical Engineering Chubu University
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Ido Toshiyuki
Department Of Electronics Faculty Of Engineering Nagoya University
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Arizumi Tetsuya
Department Of Electronic Engineering Faculty Of Engineering Nagoya University
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Yoshida Akira
Department Of Electronics Faculty Of Engineering Nagoya University
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Yoshida Akira
Department Of Cardiology Kyoto National Hospital
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Yoshida Akira
Department Of Agricultural Chemistry Nagoya University
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