Growth and Characterization of Vanadium-Doped ZnSe by Metalorganic Vapor Phase Epitaxy
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概要
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Vanadium-doped ZnSe was epitaxially grown on a (100) GaAs substrate by metalorganic vapor phase epitaxy under atmospheric pressure. The effects of the molar supply ratio of dimethylzinc to dimethylselenide on crystallinity were investigated to determine the optimum vanadium doping conditions. In the present study, as dopant sources of vanadium, vanadocene and triethoxyvanadyl were used. When triethoxyvanadyl was used as a dopant source, the crystal growth condition of vanadium-doped ZnSe changed from epitaxial growth to polycrystal growth at a molar supply ratio between 1.2 and 1.5. The magnetic property of vanadium-doped ZnSe fabricated at a molar supply ratio of 1.2 was measured using a superconducting quantum interface device at room temperature.
- 2008-12-25
著者
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Tahashi Masahiro
Department Of Electrical Engineering Chubu University
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Wu Zunyi
Department Of Electrical Engineering Chubu University
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Ido Toshiyuki
Department Of Electrical Engineering Chubu University
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Goto Hideo
Department Of Biochemistry Nagoya City University Medical School
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Ido Toshiyuki
Department of Electrical Engineering, Chubu University, 1200 Matsumoto-cho, Kasugai, Aichi 487-8501, Japan
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Tahashi Masahiro
Department of Electrical Engineering, Chubu University, 1200 Matsumoto-cho, Kasugai, Aichi 487-8501, Japan
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Wu Zunyi
Department of Electrical Engineering, Chubu University, 1200 Matsumoto-cho, Kasugai, Aichi 487-8501, Japan
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