Antimony Treatment Effect on Cd1-xMnxTe Growth on GaAs by Metal-Organic Vapor Phase Epitaxy
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概要
- 論文の詳細を見る
A heteroepitaxial film of Cd1-xMnxTe has been grown on a (100)GaAs substrate by metal-organic vapor phase epitaxy. It is shown that a high quality Cd1-xMnxTe film can be grown on the GaAs substrate by pretreating the GaAs substrate with triethyl antimony at 650°C. The best full width at half maximum of the X-ray diffraction peak of the Cd1-xMnxTe film ($x=0.12$) obtained was 650 arc sec. The effects of the triethyl antimony on the film quality of Cd1-xMnxTe are discussed.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2005-01-15
著者
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Tahashi Masahiro
Department Of Electrical Engineering Chubu University
-
Sawada Satomi
Department Of Electrical Engineering Chubu University
-
Ido Toshiyuki
Department Of Electrical Engineering Chubu University
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Goto Hideo
Department Of Biochemistry Nagoya City University Medical School
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