Preparation of ZnTe Epitaxial Films on CdS by Vapor Transport Method
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1968-09-05
著者
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Ido Toshiyuki
Department Of Electrical Engineering Chubu University
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Ido Toshiyuki
Department Of Electrical Engineering Nagoya Institute Of Technology:(present Address) Faculty Of Eng
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Saji Manabu
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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OSHIMA Shunzo
Department of Electrical Engineering, Nagoya Institute of Technology
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Oshima Shunzo
Department Of Electrical Engineering Nagoya Institute Of Technology:(present Address) Mitsubishi Hea
関連論文
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- Deep-Level Transient Spectroscopy of Nitrogen-Doped ZnSe Grown by Metalorganic Vapor Phase Epitaxy
- Growth Characteristics and Electrical Properties of (100) CdTe Layers Grown on (100) GaAs by Low-Pressure Organometallic Vapor Phase Epitaxy
- Relationship between Raman Spectra and Crystallinity of CdS Films Grown by Cathodic Electrodeposition
- Preparation and Electrical Properties of GaSb-Ge Heterojunctions by Vapor Growth Technique
- Growth and Characterization of Vanadium-Doped ZnSe by Metalorganic Vapor Phase Epitaxy
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- Diffusion Length of Holes in n-ZnSe Measured by Schottky Barrier Photovoltage Method
- Preparation of ZnTe Epitaxial Films on CdS by Vapor Transport Method
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