Preparation and Electrical Properties of GaSb-Ge Heterojunctions by Vapor Growth Technique
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概要
- 論文の詳細を見る
GaSb-Ge heterojunctions having a large lattice misfit (8%) are fabricated by a conventional closed tube process in which Ge (p- and n-type) and SbCl_5 used as a substrate and a transport agent, respectively. The substrate and source temperatures are ranged from 600℃ to 650℃ and from 650℃ to 675℃, respectively. The epitaxial layer of GaSb is a p-type single crystal, so a pGaSb-nGe structure is obtained if n-Ge is used as a substrate. When the substrate is p-Ge, Sb diffused into the Ge to produce a pGaSb-nGe-pGe structure during the deposition. The V-I characteristics of these heterojunctions are explained satisfactorily on the basis of the Riben's multi-step tunneling model.
- 社団法人応用物理学会の論文
- 1971-10-05
著者
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Ido Toshiyuki
Department Of Electrical Engineering Chubu University
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Kakehi Masahiro
Department Of Electronics Faculty Of Engineering Nagoya University
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Kakehi Masahiro
Department Of Applied Biological Chemistry The University Of Tokyo
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Arizumi Tetsuya
Department Of Electronic Engineering Faculty Of Engineering Nagoya University
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