Anomalous Junction Capacitance in Tunnel-Diodes
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概要
- 論文の詳細を見る
The U.H.F. junction capacitance in a germanium tunnel-diode has an anomalous sharp minimum around the bias voltage of maximum peak current and it rises steeply towards the negative bias voltage. The anomaly can be satisfactorily explained by taking account of the free carriers presented in the barrier layer. The anomalous minimum varies depending upon the frequency of measurement. This frequency dependence may be primarily caused by the relaxation effects of ionization and recombination processes of impurity atoms in the boundary layer. The capacitance built-in voltage also varies depending upon the frequency of measurement.
- 社団法人応用物理学会の論文
- 1965-06-15
著者
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Arizumi Tetsuya
Department Of Electronic Engineering Faculty Of Engineering Nagoya University
-
Wada Takao
Department Of Applied Electronics Daido Institute Of Technology
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Yoshida Akira
Department Of Cardiology Mitsubishi Kyoto Hospital
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Yoshida Akira
Department Of Agricultural Chemistry Nagoya University
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