Au-Ag Alloy-Silicon Schottky Barriers
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概要
- 論文の詳細を見る
Thin films of gold-silver alloy on n-type silicon were prepared by vacuum deposition of the alloy. The characteristics of the contacts were investigated by means of V-I and C-V measurements. The results showed that the barrier height of Au-Ag alloy-Si contacts varies linearly, from 0.67±0.02 eV to 0.80±0.02 eV, with composition of the alloy film. This is interpreted in terms of the change in work function which is linearly dependent upon the composition.
- 社団法人応用物理学会の論文
- 1968-08-05
著者
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ARIZUMI Tetsuya
Department of Electronic Engineering, Faculty of Engineering, Nagoya University
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Arizumi Tetsuya
Department Of Electronic Engineering Faculty Of Engineering Nagoya University
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Hirose Masataka
Department Of Electronic Engineering Faculty Of Engineering Nagoya University
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Hirose Masataka
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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Altaf Nassem
Department Of Electronic Engineering Faculty Of Engineering Nagoya University
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