Thermodynamical Consideration for the Preparation of GaAs-Ge Heterojunctions through Closed Tube Process

概要

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The general transport equations derived in our previous paper are applied to the Ge-GaAs-I_2 system. The main reactions in the system are as followed: (a) In the growth of Ge on GaAs substrates, the reaction GaI+GeI_2⇄Ge+GaI_3 dominates when the iodine concentration is low, while the reaction 2GeI_2⇄Ge+GeI_4 dominates at high iodine concentration. (b) The deposition of GaAs on Ge substrates is mainly governed by the reaction, 3GaI+1/2As_4⇄2GaAs+GaI_3 at low iodine concentration, while at high iodine concentration it is governed by 3GeI_2+2GaI_3+1/2As_4⇄2GaAs+3GeI_4. The transport rates of Ge and GaAs are calculated and compared with that in pure Ge-I_2 and GaAs-I_2 system. It is found the considerable amount of As will be incorporated into the Ge epitaxial layers grown on the GaAs substrates. These As will therefore convert the grown layer to heavily n-type to about 100 μ in the usual iodine concentration range.
社団法人応用物理学会の論文
1966-01-15