Vapor Etching of Boron Monophosphide by Gaseous Hydrogen Chloride
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概要
- 論文の詳細を見る
Vapor phase etching of BP is studied, and the etching rate is shown to increase with both temperature and HCl concentration. The etching rate increases rapidly above 1160℃, probably because BP decomposes into B_6 P and P_2. Thermodynamical calculation demonstrates that the etching rate remains almost constant with the increase in temperature. Comparison between the experiment and the theory suggests that the etching rate is governed by reaction kinetics.
- 社団法人応用物理学会の論文
- 1977-09-05
著者
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Nishinaga Tatau
Department Of Electrical Engineering Faculty Of Engineering Nagoya University:(present Address)depar
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Nishinaga Tatau
Department Of Clectronic Engineering The Faculty Of Engineering The University Of Tokyo
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Uchiyama Susumu
Department Of Biotechnology Graduate School Of Engineering Osaka University
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ASANO Hiroshi
Department of Neurosurgery,Nihon Universtity School of Medicine
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Mizutani Takashi
Department Of Electronics Faculty Of Engineering Nagoya University
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Asano Hiroshi
Department Of Electrical Engineering University Of Tokyo
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Asano Hiroshi
Department Of Electronics Faculty Of Engineering Nagoya University
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Mizutani Takashi
Department Of Electrical Engineering Faculty Of Engineering Nagoya University
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Asano Hiroshi
Department Of Cellular Pharmacology Hokkaido University Graduate School Of Medicine
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Asano Hiroshi
Department Of Cellular Pharmacology Graduate School Of Medicine Hokkaido University
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Nishinaga Tatau
Departlnent of Materials Science and Engineering, Faculty of Science and Technology, Meijo University
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