Effect of Growth Parameters on the Epitaxial Growth of BP on Si Substrate

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概要

• 論文の詳細を見る

• The effect of the growth parameters on the epitaxial growth of boron monophosphide (BP) was studied in detail for BBr_3-PCl_3-H_2-Si substrate CVD system. The growth temperature, substrate orientation, PCl_3/BBr_3 molar ratio and substrate dimensions were varied independently keeping the other parameters constant. The best BP single crystal was grown at 1050℃ on the thick and disk shaped substrate with {111} surface. The largest single crystal thus obtained had the dimensions of 3.5 cm^2×55μm. The highest mobility and the lowest carrier concentration were respectively 27 cm^2/Vンec and 2.4×10^<19>/cm^3. Mass spectrometric analysis showed the contamination by silicon as high as 1%. It was concluded that the silicon atoms at the boron site were most likely to be the donors in the grown BP film.

• 社団法人応用物理学会の論文
• 1975-06-05

著者

• Nishinaga Tatau

  Department Of Clectronic Engineering The Faculty Of Engineering The University Of Tokyo

• Mizutani Takashi

  Department Of Electronics Faculty Of Engineering Nagoya University

• Nishinaga Tatau

  Department Of Electrical Engineering Faculty Of Engineering Nagoya University

• Mizutani Takashi

  Department Of Electrical Engineering Faculty Of Engineering Nagoya University

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