Surface Diffusion of Al Atoms on GaAs Vicinal Surfaces in Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
We have studied the surface diffusion in molecular beam epitaxial growth of AlAs on GaAs vicinal surfaces by observing intensity oscillations of reflection high-energy electron diffraction (RHEED). By measuring the critical temperature where the RHEED oscillation begins to appear, the critical condition for the growth mode transition was determined. Combining the experimental results with the theory taking into account the surface diffusion and supersaturation ratio of adatoms on the terraces, the surface diffusion length of Al atoms is estimated and compared with that of GaAs.
- 社団法人応用物理学会の論文
- 1990-05-20
著者
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TANAKA Masaaki
Department of Physiology, Osaka City University Graduate School of Medicine
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Nishinaga Tatau
Department Of Clectronic Engineering The Faculty Of Engineering The University Of Tokyo
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Suzuki Takashi
Department Of Biochemistry University Of Shizuoka School Of Pharmaceutical Sciences:core Research Fo
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Tanaka Masaaki
Department Of Computer Engineering University Of Hyogo:(presently With)mitsubishi Electric Co.
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Tanaka Masaaki
Department Of Electronic Engineering Faculty Of Engineering The University Of Tokyo
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Suzuki Takashi
Department Of Anesthesia Showa University Northern Yokohama Hospital
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Suzuki Takashi
Department Of Electronic Engineering Faculty Of Engineering The University Of Tokyo
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Suzuki Takashi
Department Of Anatomic Pathology Tohoku University School Of Medicine
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