A New Spin-Functional Metal-Oxide-Semiconductor Field-Effect Transistor Based on Magnetic Tunnel Junction Technology : Pseudo-Spin-MOSFET

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2010-01-25

著者

• TANAKA Masaaki

  Department of Physiology, Osaka City University Graduate School of Medicine

• Wang Wenhong

  Magnetic Materials Center National Institute For Materials Science (nims)

• SUKEGAWA Hiroaki

  Magnetic Materials Center, National Institute for Materials Science (NIMS)

• INOMATA Koichiro

  Magnetic Materials Center, National Institute for Materials Science (NIMS)

• Sugahara Satoshi

  Imaging Science And Engineering Laboratory Tokyo Institute Of Technology

• Inomata Koichiro

  Magnetic Materials Center National Institute For Materials Science (nims)

• SHUTO Yusuke

  Imaging Science and Engineering Laboratory, Tokyo Institute of Technology

• NAKANE Ryosho

  Department of Electrical Engineering and Information Systems, The University of Tokyo

• Shuto Yusuke

  Imaging Science And Engineering Laboratory Tokyo Institute Of Technology

• Nakane Ryosho

  Department Of Electrical Engineering And Information Systems The University Of Tokyo

• Sukegawa Hiroaki

  Magnetic Materials Center National Institute For Materials Science (nims)

• Tanaka Masaaki

  Department Of Computer Engineering University Of Hyogo:(presently With)mitsubishi Electric Co.

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