Nonvolatile Power-Gating Field-Programmable Gate Array Using Nonvolatile Static Random Access Memory and Nonvolatile Flip-Flops Based on Pseudo-Spin-Transistor Architecture with Spin-Transfer-Torque Magnetic Tunnel Junctions (Special Issue : Applied Physi
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概要
著者
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Sugahara Satoshi
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Shuto Yusuke
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
関連論文
- A New Spin-Functional Metal-Oxide-Semiconductor Field-Effect Transistor Based on Magnetic Tunnel Junction Technology : Pseudo-Spin-MOSFET
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- Nonvolatile Delay Flip-Flop Based on Spin-Transistor Architecture and Its Power-Gating Applications
- Nonvolatile Static Random Access Memory Using Resistive Switching Devices: Variable-Transconductance Metal–Oxide–Semiconductor Field-Effect-Transistor Approach
- Reconfigurable Logic Gates Using Single-Electron Spin Transistors
- Fabrication of III–V on Insulator Structures on Si Using Microchannel Epitaxy with a Two-Step Growth Technique
- Nonvolatile Static Random Access Memory Using Magnetic Tunnel Junctions with Current-Induced Magnetization Switching Architecture
- Nonvolatile Power-Gating Field-Programmable Gate Array Using Nonvolatile Static Random Access Memory and Nonvolatile Flip-Flops Based on Pseudo-Spin-Transistor Architecture with Spin-Transfer-Torque Magnetic Tunnel Junctions (Special Issue : Applied Physi
- Ultrathin Ge-on-Insulator Metal Source/Drain p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated By Low-Temperature Molecular-Beam Epitaxy
- Epitaxial Growth and Magnetic Properties of Ferromagnetic Semiconductor Ge1-xFex Thin Films Epitaxially Grown on Si(001) Substrates
- Effect of Tensile Strain on Gate Current of Strained-Si n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors