Effect of Tensile Strain on Gate Current of Strained-Si n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
スポンサーリンク
概要
- 論文の詳細を見る
In this paper, we report the effect of tensile strain on the gate current of strained-Si n-channel metal–oxide–semiconductor field-effect transistors (MOSFETs) with an emphasis on the physical mechanism of the decrease in gate current due to strain. It is found that gate current decreases with an increase in strain and that a strain of 1.2% leads to a decrease in gate current by around one order of magnitude in a Fowler–Nordheim (F–N) tunneling current region. It is also found that this gate current decrease due to strain is attributed to an increase in barrier height for F–N tunneling current. This gate current decrease due to strain is quantitatively explained by the increase in barrier height due to a strain-induced decrease in conduction band edge energy, because of the good agreement between the increase in experimentally obtained barrier height and the reported energy change of the conduction band edge of Si.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-04-30
著者
-
Sugahara Satoshi
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
-
Hoshii Takuya
Graduate School Of Frontier Science The Univ. Of Tokyo
-
Takagi Shin-ichi
Graduate School Of Frontier Science The University Of Tokyo
-
Hoshii Takuya
Graduate School of Frontier Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
-
Takagi Shin-ichi
Graduate School of Frontier Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
関連論文
- Comparative Study on Influence of Subband Structures on Electrical Characteristics of III-V Semiconductor, Ge and Si Channel n-MISFETs
- A New Spin-Functional Metal-Oxide-Semiconductor Field-Effect Transistor Based on Magnetic Tunnel Junction Technology : Pseudo-Spin-MOSFET
- Epitaxial growth and magnetic properties of ferromagnetic semiconductor Ge1-xFe[x] thin films epitaxially grown on Si(001) substrates
- Nonvolatile Delay Flip-Flop Based on Spin-Transistor Architecture and Its Power-Gating Applications
- Nonvolatile Static Random Access Memory Using Resistive Switching Devices: Variable-Transconductance Metal–Oxide–Semiconductor Field-Effect-Transistor Approach
- Fabrication of SiO_2/Ge MIS structures by plasma oxidation of ultrathin Si films grown on Ge
- Evaluation of SiO_2/GeO_2/Ge MIS Interface Properties by Low Temperature Conductance Method
- Reconfigurable Logic Gates Using Single-Electron Spin Transistors
- Fabrication of III–V on Insulator Structures on Si Using Microchannel Epitaxy with a Two-Step Growth Technique
- Nonvolatile Static Random Access Memory Using Magnetic Tunnel Junctions with Current-Induced Magnetization Switching Architecture
- Nonvolatile Power-Gating Field-Programmable Gate Array Using Nonvolatile Static Random Access Memory and Nonvolatile Flip-Flops Based on Pseudo-Spin-Transistor Architecture with Spin-Transfer-Torque Magnetic Tunnel Junctions (Special Issue : Applied Physi
- Ultrathin Ge-on-Insulator Metal Source/Drain p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated By Low-Temperature Molecular-Beam Epitaxy
- Epitaxial Growth and Magnetic Properties of Ferromagnetic Semiconductor Ge1-xFex Thin Films Epitaxially Grown on Si(001) Substrates
- Effect of Tensile Strain on Gate Current of Strained-Si n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors