Reconfigurable Logic Gates Using Single-Electron Spin Transistors
スポンサーリンク
概要
- 論文の詳細を見る
We propose and numerically analyze novel reconfigurable logic gates using “single-electron spin transistors” (SESTs), which are single-electron transistors (SETs) with ferromagnetic electrodes and islands. The output characteristics of a SEST depend on the relative magnetization configuration of the ferromagnetic island with respect to the magnetization of the source and the drain, i.e., high current drive capability in parallel magnetization and low current drive capability in antiparallel magnetization. The summation of multiple input signals can be achieved by directly coupling multiple input gate electrodes to the SEST island, without using a floating gate. A Tucker-type inverter with a variable threshold voltage, a reconfigurable AND/OR logic gate, and a reconfigurable logic gate for all symmetric Boolean functions are proposed and simulated using the Monte Carlo method.
- 2007-10-15
著者
-
Hai Pham
Department Of Electronic Engineering The University Of Tokyo
-
Sugahara Satoshi
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
-
Tanaka Masaaki
Department Of Computer Engineering University Of Hyogo:(presently With)mitsubishi Electric Co.
-
Sugahara Satoshi
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 4259-G2-14 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
-
Hai Pham
Department of Electronic Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
関連論文
- Role of lactate in the brain energy metabolism : revealed by Bioradiography
- Method estimating reflection coefficients of adaptive lattice filter and its application to system identification
- Novel Reconfigurable Logic Gates Using Spin Metal-Oxide-Semiconductor Field-Effect Transistors
- High-Resolution Transmission Electron Microscopy of AlAs/GaAs Imterfacial Structure in the Projection
- A New Spin-Functional Metal-Oxide-Semiconductor Field-Effect Transistor Based on Magnetic Tunnel Junction Technology : Pseudo-Spin-MOSFET
- Magnetic Semiconductors and Heterostructures for Spin Electronics
- Epitaxial growth and magnetic properties of ferromagnetic semiconductor Ge1-xFe[x] thin films epitaxially grown on Si(001) substrates
- Waveguide-Based 1.5μm Optical Isolator Based on Magneto-Optic Effect in Ferromagnetic MnAs
- Nonvolatile Delay Flip-Flop Based on Spin-Transistor Architecture and Its Power-Gating Applications
- Nonvolatile Static Random Access Memory Using Resistive Switching Devices: Variable-Transconductance Metal–Oxide–Semiconductor Field-Effect-Transistor Approach
- IS-32 Regulation of Telomerase Activity by Sex Steroid Hormones
- Synthesis of Biaryls and Oligoarenes Using Aryl[2-(hydroxymethyl)phenyl]dimethylsilanes
- Single-Crystalline Ferromagnetic Alloy Semiconductor Ge1-xMnx Grown on Ge(111)
- Spin-Dependent Tunneling Transport in III-V-Based Magnetic Heterostructures
- Precipitation of Amorphous Ferromagnetic Semiconductor Phase in Epitaxially Grown Mn-Doped Ge Thin Films
- Magnetooptical Kerr Effect of Semiconductor-Based Multilayer Structures Containing a GaAs:MnAs Granular Thin Film
- Surface Diffusion of Al Atoms on GaAs Vicinal Surfaces in Molecular Beam Epitaxy
- Planar Hall Effect and Magnetic Anisotropy in a Mn δ-doped GaAs/p-AlGaAs Heterostructure
- Growth and Properties of Quaternary Alloy Magnetic Semiconductor (InGaMn)As : Semiconductors
- Scaling Properties of Type-II Intermittency
- Reconfigurable Logic Gates Using Single-Electron Spin Transistors
- Fabrication of III–V on Insulator Structures on Si Using Microchannel Epitaxy with a Two-Step Growth Technique
- Nonvolatile Static Random Access Memory Using Magnetic Tunnel Junctions with Current-Induced Magnetization Switching Architecture
- Relationship between cognitive functions and prevalence of fatigue in elementary and junior high school students
- Changes in cognitive functions of students in the transitional period from elementary school to junior high school
- Nonvolatile Power-Gating Field-Programmable Gate Array Using Nonvolatile Static Random Access Memory and Nonvolatile Flip-Flops Based on Pseudo-Spin-Transistor Architecture with Spin-Transfer-Torque Magnetic Tunnel Junctions (Special Issue : Applied Physi
- Tunneling Magnetoresistance in a Mn $\delta$-doped GaAs/AlAs/MnAs Heterostructure
- Critical Behavior of Complex Logarithmic Map
- Ultrathin Ge-on-Insulator Metal Source/Drain p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated By Low-Temperature Molecular-Beam Epitaxy
- Epitaxial Growth and Magnetic Properties of Ferromagnetic Semiconductor Ge1-xFex Thin Films Epitaxially Grown on Si(001) Substrates
- Effect of Tensile Strain on Gate Current of Strained-Si n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
- Electrical and Optical Control of Ferromagnetism in III-V Semiconductor Heterostructures at High Temperature (${\sim}100$ K)
- In-Plane Uniaxial Magnetic Anisotropy of [(InyGa1-y)1-xMnx]As Characterized by Planar Hall Effect
- Spin-Filter Transistor
- Precipitation of Amorphous Ferromagnetic Semiconductor Phase in Epitaxially Grown Mn-Doped Ge Thin Films