In-Plane Uniaxial Magnetic Anisotropy of [(InyGa1-y)1-xMnx]As Characterized by Planar Hall Effect
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概要
- 論文の詳細を見る
The in-plane magnetic anisotropy was studied for a quaternary alloy ferromagnetic semiconductor [(InyGa1-y)1-xMnx]As thin film with $x=0.12$ and $y=0.54$ grown on an InP(001) substrate using planar Hall effect measurements. The present [(In0.54Ga0.46)0.88Mn0.12]As thin film shows a large planar Hall effect resistance change of 210 $\Omega$ at 2.8 K. It was found that the film has strong in-plane uniaxial magnetic anisotropy ($K_{\text{u}}:K_{1}>100:1$) at 2.8 K, and its easy magnetization axis is along the $[\bar{1}10]$ direction in the whole temperature range below its Curie temperature ($< 100$ K). This strong in-plane uniaxial magnetic anisotropy as well as the large planer Hall effect will be a potential advantage for spin-electronic devices.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-02-25
著者
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Ohya Shinobu
Department Of Electronic Engineering The University Of Tokyo
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Yokoyama Masafumi
Department Of Electrical Engineering And Information Systems The University Of Tokyo
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Tanaka Masaaki
Department Of Computer Engineering University Of Hyogo:(presently With)mitsubishi Electric Co.
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Tanaka Masaaki
Department of Electronic Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Yokoyama Masafumi
Department of Electronic Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Ohya Shinobu
Department of Electronic Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Ohya Shinobu
Department of Electrical Engineering and Information Systems, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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