Electron Mobility Enhancement of Extremely Thin Body In_<0.7>Ga_<0.3>As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates by Metal-Oxide-Semiconductor Interface Buffer Layers
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概要
- 論文の詳細を見る
- 2012-01-25
著者
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Yamada Hisashi
Sumitomo Chemical
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MIYATA Noriyuki
National Institute of Advanced Industrial Science and Technology (AIST)
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URABE Yuji
National Institute of Advanced Industrial Science and Technology (AIST)
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Nakane Ryosho
Department Of Electrical Engineering And Information Systems The University Of Tokyo
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Fukuhara Noboru
Sumitomo Chemical
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Hata Masahiko
Sumitomo Chemical
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Takenaka Mitsuru
Department Of Electrical Engineering And Information Systems School Of Engineering The University Of
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Lee Sunghoon
Department Of Management Systems Engineering
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Yasuda Tetsuji
National Institute Of Advanced Industrial Science And Technology
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Yokoyama Masafumi
Department Of Electrical Engineering And Information Systems The University Of Tokyo
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Takagi Shinichi
Department Of Electrical Engineering And Information Systems The University Of Tokyo
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KIM SangHyeon
Department of Electrical Engineering and Information Systems, The University of Tokyo
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TAOKA Noriyuki
Department of Electrical Engineering and Information Systems, The University of Tokyo
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IIDA Ryo
Department of Electrical Engineering and Information Systems, The University of Tokyo
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Iida Ryo
Department Of Electrical Engineering And Information Systems The University Of Tokyo
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Kim Sanghyeon
Department Of Electrical Engineering And Information Systems The University Of Tokyo
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Miyata Noriyuki
National Institute Of Advanced Industrial Science And Technology
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Urabe Yuji
National Institute Of Advanced Industrial Science And Technology
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Taoka Noriyuki
Department Of Electrical Engineering And Information Systems The University Of Tokyo
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LEE Sunghoon
Department of Electrical Engineering and Information Systems, The University of Tokyo
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Taoka Noriyuki
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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