Characterization of Monolayer Oxide Formation Processes on High-Index Si Surfaces by Photoelectron Spectroscopy with Synchrotron Radiation

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概要

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• Thermal oxidation of high-index silicon surfaces, Si(113), Si(331), and Si(120), in a monolayer regime has been investigated by X-ray photoelectron spectroscopy (XPS) with synchrotron radiation. The oxide thickness, composition, and band bending are evaluated by peak deconvolution of the Si 2p core level XPS spectra. We found that changes in the oxide composition correlate with changes in the band bending. This reveals that production of the Si⁴⁺state is associated with the Si ejection process accompanied by the production of vacancies. We found that the reactivity of the Si(120) surface in oxidation is drastically reduced at reaction temperatures below 690 K.

• The Japan Society of Applied Physicsの論文
• 2013-11-25

著者

• Yasuda Tetsuji

  National Institute Of Advanced Industrial Science And Technology

• Tanaka Masatoshi

  Faculty Of Agriculture Okayama University

• Teraoka Yuden

  Quantum Beam Science Directorate, Japan Atomic Energy Agency, Koto, Sayo, Hyogo 679-5148, Japan

• Yoshigoe Akitaka

  Quantum Beam Science Directorate, Japan Atomic Energy Agency, Koto, Sayo, Hyogo 679-5148, Japan

• Ohno Shin-ya

  Faculty of Engineering, Yokohama National University

• Tanaka Masatoshi

  Faculty of Engineering, Yokohama National University, Yokohama 240-8501, Japan

• Abe Sosuke

  Faculty of Engineering, Yokohama National University, Yokohama 240-8501, Japan

• Kanemura Rui

  Faculty of Engineering, Yokohama National University, Yokohama 240-8501, Japan

• Ogata Shoichi

  Faculty of Engineering, Yokohama National University, Yokohama 240-8501, Japan

• Teraoka Yuden

  Quantum Beam Science Directorate, Japan Atomic Energy Agency, Sayo, Hyogo 679-5148, Japan

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