Impact of Cation Surface Termination on the Electrical Characteristics of HfO2/InGaAs(001) Metal--Oxide--Semiconductor Capacitors
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概要
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Electrical characteristics of HfO2/InGaAs metal--oxide--semiconductor (MOS) capacitors fabricated on In0.53Ga0.47As(001) surfaces with various surface reconstructions were investigated. To explore the effect of interface structure on the MOS properties, we prepared atomically-controlled Ga-, In-, and Al-rich (4\times 2) and As-rich (2\times 4) surfaces on InGaAs(001), and identified their atomic structures. The MOS capacitors fabricated on cation-rich InGaAs surfaces show a smaller capacitance--voltage frequency dispersion, suggesting that the cation-oxide-rich HfO2/InGaAs interfaces is preferable for suppressing interface-state density in the upper half band gap. It was also found that the interface containing higher-atomic-number cation has smaller frequency dispersion. We discuss the origin for the electrical improvement by the cation adsorption.
- 2011-10-25
著者
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Ohtake Akihiro
National Institute For Materials Science
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Yasuda Tetsuji
National Institute Of Advanced Industrial Science And Technology
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Miyata Noriyuki
National Institute Of Advanced Industrial Science And Technology
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Urabe Yuji
National Institute Of Advanced Industrial Science And Technology
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Miyata Noriyuki
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan
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Yasuda Tetsuji
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan
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Yasuda Tetsuji
National Institute for Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan
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