Self-Aligned Metal Source/Drain InxGa1-xAs n-Metal--Oxide--Semiconductor Field-Effect Transistors Using Ni--InGaAs Alloy

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概要

• 論文の詳細を見る

• We report that a Ni--InGaAs alloy can be used as a source/drain (S/D) metal for InGaAs metal--oxide--semiconductor field-effect transistors (MOSFETs), allowing us to employ the salicide-like self-align S/D formation. We also introduce Schottky barrier height (SBH) engineering process by increasing the indium content of InxGa1-xAs channels, which successfully reduces SBH down to zero. We propose a fabrication process for self-aligned metal S/D MOSFETs using Ni--InGaAs and demonstrate successful operation of the metal S/D InxGa1-xAs MOSFETs. The In0.7Ga0.3As MOSFETs exhibit an S/D resistance ($R_{\text{SD}}$) that is 1/5 lower than that in P--N junction devices and a high peak mobility of 2000 cm2 V-1 s-1.

• 2011-02-25

著者

• Yamada Hisashi

  Sumitomo Chemical

• MIYATA Noriyuki

  National Institute of Advanced Industrial Science and Technology (AIST)

• URABE Yuji

  National Institute of Advanced Industrial Science and Technology (AIST)

• Nakane Ryosho

  Department Of Electrical Engineering And Information Systems The University Of Tokyo

• Fukuhara Noboru

  Sumitomo Chemical

• Hata Masahiko

  Sumitomo Chemical

• Takenaka Mitsuru

  Department Of Electrical Engineering And Information Systems School Of Engineering The University Of

• Lee Sunghoon

  Department Of Management Systems Engineering

• Yasuda Tetsuji

  National Institute Of Advanced Industrial Science And Technology

• Yokoyama Masafumi

  Department Of Electrical Engineering And Information Systems The University Of Tokyo

• Takagi Shinichi

  Department Of Electrical Engineering And Information Systems The University Of Tokyo

• KIM SangHyeon

  Department of Electrical Engineering and Information Systems, The University of Tokyo

• TAOKA Noriyuki

  Department of Electrical Engineering and Information Systems, The University of Tokyo

• IIDA Ryo

  Department of Electrical Engineering and Information Systems, The University of Tokyo

• Iida Ryo

  Department Of Electrical Engineering And Information Systems The University Of Tokyo

• Kim Sanghyeon

  Department Of Electrical Engineering And Information Systems The University Of Tokyo

• Miyata Noriyuki

  National Institute Of Advanced Industrial Science And Technology

• Urabe Yuji

  National Institute Of Advanced Industrial Science And Technology

• Taoka Noriyuki

  Department Of Electrical Engineering And Information Systems The University Of Tokyo

• LEE Sunghoon

  Department of Electrical Engineering and Information Systems, The University of Tokyo

• Taoka Noriyuki

  Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

• Yasuda Tetsuji

  National Institute for Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan

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