Kim Sanghyeon | Department Of Electrical Engineering And Information Systems The University Of Tokyo
スポンサーリンク
概要
関連著者
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Takenaka Mitsuru
Department Of Electrical Engineering And Information Systems School Of Engineering The University Of
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Yokoyama Masafumi
Department Of Electrical Engineering And Information Systems The University Of Tokyo
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Takagi Shinichi
Department Of Electrical Engineering And Information Systems The University Of Tokyo
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Kim Sanghyeon
Department Of Electrical Engineering And Information Systems The University Of Tokyo
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Yamada Hisashi
Sumitomo Chemical
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Fukuhara Noboru
Sumitomo Chemical
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Hata Masahiko
Sumitomo Chemical
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Yasuda Tetsuji
National Institute Of Advanced Industrial Science And Technology
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KIM SangHyeon
Department of Electrical Engineering and Information Systems, The University of Tokyo
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Urabe Yuji
National Institute Of Advanced Industrial Science And Technology
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Taoka Noriyuki
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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URABE Yuji
National Institute of Advanced Industrial Science and Technology (AIST)
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TAOKA Noriyuki
Department of Electrical Engineering and Information Systems, The University of Tokyo
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Taoka Noriyuki
Department Of Electrical Engineering And Information Systems The University Of Tokyo
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Yasuda Tetsuji
National Institute for Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan
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Takagi Hideki
National Inst. Of Advanced Industrial Sci. And Technol.
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YOKOYAMA Masafumi
Department of Electrical Engineering and Information Systems, The University of Tokyo
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TAKENAKA Mitsuru
Department of Electrical Engineering and Information Systems, The University of Tokyo
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TAKAGI Shinichi
Department of Electrical Engineering and Information Systems, The University of Tokyo
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MIYATA Noriyuki
National Institute of Advanced Industrial Science and Technology (AIST)
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Nakane Ryosho
Department Of Electrical Engineering And Information Systems The University Of Tokyo
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Sugiyama Masakazu
Department Of Biotechnology Graduate School Of Agriculture And Life Sciences The University Of Tokyo
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Lee Sunghoon
Department Of Management Systems Engineering
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Zhang Rui
Department Of Biochemistry And Molecular Biology Fourth Military Medical University
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Nakano Yoshiaki
Department Of Electrical Engineering And Information Systems The University Of Tokyo
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IIDA Ryo
Department of Electrical Engineering and Information Systems, The University of Tokyo
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Iida Ryo
Department Of Electrical Engineering And Information Systems The University Of Tokyo
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Miyata Noriyuki
National Institute Of Advanced Industrial Science And Technology
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MAEDA Tatsuro
National Institute of Advanced Industrial Science and Technology
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ICHIKAWA Osamu
Sumitomo Chemical Co., Ltd.
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LEE Sunghoon
Department of Electrical Engineering and Information Systems, The University of Tokyo
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Nakano Yoshiaki
Research Center For Advanced Science And Technology Univ. Of Tokyo
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Nakano Y
Research Center For Advanced Science And Technology The University Of Tokyo
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FUKUHARA Noboru
Sumitomo Chemical Co., Ltd.
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HATA Masahiko
Sumitomo Chemical Co., Ltd.
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SUGIYAMA Masakazu
The University of Tokyo
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ZOTA Cezar
Department of Electrical Engineering and Information Systems, The University of Tokyo
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KIM Sang-Hyeon
Department of Electrical Engineering and Information Systems, The University of Tokyo
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Zota Cezar
Department Of Electrical Engineering And Information Systems The University Of Tokyo
著作論文
- ？？/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding
- Electron Mobility Enhancement of Extremely Thin Body In_Ga_As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates by Metal-Oxide-Semiconductor Interface Buffer Layers
- Self-Aligned Metal Source/Drain InxGa1-xAs n-Metal--Oxide--Semiconductor Field-Effect Transistors Using Ni--InGaAs Alloy
- III-V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding
- Characterization of Ni-GaSb Alloys Formed by Direct Reaction of Ni with GaSb