Nakane Ryosho | Department Of Electrical Engineering And Information Systems The University Of Tokyo
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概要
関連著者
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Nakane Ryosho
Department Of Electrical Engineering And Information Systems The University Of Tokyo
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Takenaka Mitsuru
Department Of Electrical Engineering And Information Systems School Of Engineering The University Of
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Takagi Shinichi
Department Of Electrical Engineering And Information Systems The University Of Tokyo
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Yamada Hisashi
Sumitomo Chemical
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MIYATA Noriyuki
National Institute of Advanced Industrial Science and Technology (AIST)
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URABE Yuji
National Institute of Advanced Industrial Science and Technology (AIST)
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Fukuhara Noboru
Sumitomo Chemical
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Hata Masahiko
Sumitomo Chemical
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Lee Sunghoon
Department Of Management Systems Engineering
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Yasuda Tetsuji
National Institute Of Advanced Industrial Science And Technology
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Yokoyama Masafumi
Department Of Electrical Engineering And Information Systems The University Of Tokyo
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Tanaka Masaaki
Department Of Computer Engineering University Of Hyogo:(presently With)mitsubishi Electric Co.
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KIM SangHyeon
Department of Electrical Engineering and Information Systems, The University of Tokyo
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TAOKA Noriyuki
Department of Electrical Engineering and Information Systems, The University of Tokyo
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IIDA Ryo
Department of Electrical Engineering and Information Systems, The University of Tokyo
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Iida Ryo
Department Of Electrical Engineering And Information Systems The University Of Tokyo
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Kim Sanghyeon
Department Of Electrical Engineering And Information Systems The University Of Tokyo
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Miyata Noriyuki
National Institute Of Advanced Industrial Science And Technology
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Urabe Yuji
National Institute Of Advanced Industrial Science And Technology
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Taoka Noriyuki
Department Of Electrical Engineering And Information Systems The University Of Tokyo
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LEE Sunghoon
Department of Electrical Engineering and Information Systems, The University of Tokyo
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Taoka Noriyuki
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Kondo Jun
Department Of Pathology Hirosaki University School Of Medicine
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TANAKA Masaaki
Department of Physiology, Osaka City University Graduate School of Medicine
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Wang Wenhong
Magnetic Materials Center National Institute For Materials Science (nims)
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SUKEGAWA Hiroaki
Magnetic Materials Center, National Institute for Materials Science (NIMS)
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INOMATA Koichiro
Magnetic Materials Center, National Institute for Materials Science (NIMS)
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Sugahara Satoshi
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Inomata Koichiro
Magnetic Materials Center National Institute For Materials Science (nims)
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SHUTO Yusuke
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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NAKANE Ryosho
Department of Electrical Engineering and Information Systems, The University of Tokyo
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Shuto Yusuke
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Sukegawa Hiroaki
Magnetic Materials Center National Institute For Materials Science (nims)
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Nakane Ryosho
Department of Electronic Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Kondo Jun
Department of Pathology and Bioscience, Hirosaki University Graduate School of Medicine
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Tanaka Masaaki
Department of Electronic Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Kondo Jun
Department of Electronic Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Nakakita Yosuke
Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Sasada Takashi
Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Yasuda Tetsuji
National Institute for Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan
著作論文
- A New Spin-Functional Metal-Oxide-Semiconductor Field-Effect Transistor Based on Magnetic Tunnel Junction Technology : Pseudo-Spin-MOSFET
- Interface-Controlled Self-Align Source/Drain Ge p-Channel Metal--Oxide--Semiconductor Field-Effect Transistors Fabricated Using Thermally Oxidized GeO2 Interfacial Layers
- Electron Mobility Enhancement of Extremely Thin Body In_Ga_As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates by Metal-Oxide-Semiconductor Interface Buffer Layers
- Self-Aligned Metal Source/Drain InxGa1-xAs n-Metal--Oxide--Semiconductor Field-Effect Transistors Using Ni--InGaAs Alloy
- Tunneling Magnetoresistance in a Mn $\delta$-doped GaAs/AlAs/MnAs Heterostructure