Nakakita Yosuke | Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan

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概要

関連著者

Nakane Ryosho
Department Of Electrical Engineering And Information Systems The University Of Tokyo
Takenaka Mitsuru
Department Of Electrical Engineering And Information Systems School Of Engineering The University Of
Takagi Shinichi
Department Of Electrical Engineering And Information Systems The University Of Tokyo
Nakakita Yosuke
Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
Sasada Takashi
Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan

著作論文

Interface-Controlled Self-Align Source/Drain Ge p-Channel Metal--Oxide--Semiconductor Field-Effect Transistors Fabricated Using Thermally Oxidized GeO2 Interfacial Layers

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