Yasuda Tetsuji | National Institute for Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan

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著作論文

Kelvin Probe Study of Dipole Formation and Annihilation at the HfO_2/Si Interface
High Electron Mobility Metal-Insulator-Semiconductor Field-Effect Transistors Fabricated on (111)-Oriented InGaAs Channels
Effect of Interface Oxidation on the Electrical Characteristics of HfO_2/Ultrathin-Epitaxial-Ge/GaAs(100) Structures
Preparation and electrical characterization of CeO2 films for gate dielectrics application: comparative study of chemical vapor deposition and atomic layer deposition processes (Special issue: Dielectric thin films for future electron devices: science and
？？/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding
Electron Mobility Degradation and Interface Dipole Formation in Direct-Contact HfO_2/Si Metal-Oxide-Semiconductor Field-Effect Transistors
Self-Aligned Metal Source/Drain InxGa1-xAs n-Metal--Oxide--Semiconductor Field-Effect Transistors Using Ni--InGaAs Alloy
III-V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding
Controlling Anion Composition at Metal--Insulator--Semiconductor Interfaces on III--V Channels by Plasma Processing
Impact of Cation Surface Termination on the Electrical Characteristics of HfO2/InGaAs(001) Metal--Oxide--Semiconductor Capacitors

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