Effect of Interface Oxidation on the Electrical Characteristics of HfO_2/Ultrathin-Epitaxial-Ge/GaAs(100) Structures
スポンサーリンク
概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2010-03-25
著者
-
Ohtake Akihiro
Joint Research Center For Atom Technology (jrcat):angstrom Technology Partnership (atp)
-
Ohtake Akihiro
National Institute For Materials Science (nims)
-
Yasuda Tetsuji
National Institute Of Advanced Industrial Science And Technology (aist)
-
MIYATA Noriyuki
National Institute of Advanced Industrial Science and Technology (AIST)
-
URABE Yuji
National Institute of Advanced Industrial Science and Technology (AIST)
-
Ohtake Akihiro
National Institute For Materials Science
-
Yasuda Tetsuji
National Institute Of Advanced Industrial Science And Technology
-
Miyata Noriyuki
National Institute Of Advanced Industrial Science And Technology
-
Urabe Yuji
National Institute Of Advanced Industrial Science And Technology
-
Yasuda Tetsuji
National Institute for Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan
関連論文
- Kelvin Probe Study of Dipole Formation and Annihilation at the HfO_2/Si Interface
- Self-Assembly of Symmetric GaAs Quantum Dots on (111)A Substrates : Suppression of Fine-Structure Splitting
- Non-Contact and Non-Destructive Measurement of Carrier Concentration of Nitrogen-Doped ZnSe by Reflectance Difference Spectroscopy
- Proposal of Selective Growth Technique Using Periodic Strain Field Caused by Misfit Dislocations
- Thin Body III-V-Semiconductor-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Fabricated Using Direct Wafer Bonding
- High Electron Mobility Metal-Insulator-Semiconductor Field-Effect Transistors Fabricated on (111)-Oriented InGaAs Channels
- Effect of Interface Oxidation on the Electrical Characteristics of HfO_2/Ultrathin-Epitaxial-Ge/GaAs(100) Structures
- Ultrathin Body InGaAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors with InP Passivation Layers on Si Substrates Fabricated by Direct Wafer Bonding
- Impact of cation surface termination on the electrical characteristics of HfO2/InGaAs(001) metal-oxide-semiconductor capacitors (Special issue: Dielectric thin films for future electron devices: science and technology)
- Preparation and electrical characterization of CeO2 films for gate dielectrics application: comparative study of chemical vapor deposition and atomic layer deposition processes (Special issue: Dielectric thin films for future electron devices: science and
- ？？/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding
- Electron Mobility Enhancement of Extremely Thin Body In_Ga_As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates by Metal-Oxide-Semiconductor Interface Buffer Layers
- Electron Mobility Degradation and Interface Dipole Formation in Direct-Contact HfO_2/Si Metal-Oxide-Semiconductor Field-Effect Transistors
- Self-Aligned Metal Source/Drain InxGa1-xAs n-Metal--Oxide--Semiconductor Field-Effect Transistors Using Ni--InGaAs Alloy
- III-V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding
- Controlling Anion Composition at Metal--Insulator--Semiconductor Interfaces on III--V Channels by Plasma Processing
- Impact of Cation Surface Termination on the Electrical Characteristics of HfO2/InGaAs(001) Metal--Oxide--Semiconductor Capacitors
- Characterization of Monolayer Oxide Formation Processes on High-Index Si Surfaces by Photoelectron Spectroscopy with Synchrotron Radiation