High Electron Mobility Metal-Insulator-Semiconductor Field-Effect Transistors Fabricated on (111)-Oriented InGaAs Channels
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2009-12-25
著者
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Sugiyama Masaaki
Advanced Materials & Technology Research Laboratories Nippon Steel Corporation
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Sugiyama M
Department Of Electric Engineering And Information Systems School Of Engineering The University Of T
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Itatani Taro
National Institute Of Advanced Industrial Science And Technology (aist)
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Itatani Taro
National Institute Of Advanced Industrial Science And Technology
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Yasuda Tetsuji
National Institute Of Advanced Industrial Science And Technology (aist)
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Yamada Hisashi
Sumitomo Chemical
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FUKUHARA Noboru
Sumitomo Chemical Co., Ltd.
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HATA Masahiko
Sumitomo Chemical Co., Ltd.
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ISHII Hiroyuki
National Institute of Advanced Industrial Science and Technology (AIST)
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MIYATA Noriyuki
National Institute of Advanced Industrial Science and Technology (AIST)
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URABE Yuji
National Institute of Advanced Industrial Science and Technology (AIST)
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DEURA Momoko
The University of Tokyo
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SUGIYAMA Masakazu
The University of Tokyo
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TAKENAKA Mitsuru
The University of Tokyo
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TAKAGI Shinichi
The University of Tokyo
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Fukuhara Noboru
Sumitomo Chemical
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Hata Masahiko
Sumitomo Chemical
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Deura Momoko
Department Of Electrical Engineering And Information Systems School Of Engineering The University Of
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Takenaka Mitsuru
Department Of Electrical Engineering And Information Systems School Of Engineering The University Of
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Yasuda Tetsuji
National Institute Of Advanced Industrial Science And Technology
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Miyata Noriyuki
National Institute Of Advanced Industrial Science And Technology
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Urabe Yuji
National Institute Of Advanced Industrial Science And Technology
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Yasuda Tetsuji
National Institute for Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan
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