Ultrathin Body InGaAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors with InP Passivation Layers on Si Substrates Fabricated by Direct Wafer Bonding

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2011-05-25

著者

• TAKAGI Hideki

  National Institute of Advanced Industrial Science and Technology

• Takagi Hideki

  National Inst. Of Advanced Industrial Sci. And Technol.

• Nakano Y

  Research Center For Advanced Science And Technology The University Of Tokyo

• Yasuda Tetsuji

  National Institute Of Advanced Industrial Science And Technology (aist)

• Yamada Hisashi

  Sumitomo Chemical

• YOKOYAMA Masafumi

  Department of Electrical Engineering and Information Systems, The University of Tokyo

• TAKAGI Shinichi

  Department of Electrical Engineering and Information Systems, The University of Tokyo

• SUGIYAMA Masakazu

  The University of Tokyo

• Fukuhara Noboru

  Sumitomo Chemical

• Nakano Yoshiaki

  Department Of Surgery Ntt West Osaka Hospital

• Hata Masahiko

  Sumitomo Chemical

• Takenaka Mitsuru

  Department Of Electrical Engineering And Information Systems School Of Engineering The University Of

• Sugiyama Masakazu

  Department Of Biotechnology Graduate School Of Agriculture And Life Sciences The University Of Tokyo

• Yasuda Tetsuji

  National Institute Of Advanced Industrial Science And Technology

• Yokoyama Masafumi

  Department Of Electrical Engineering And Information Systems The University Of Tokyo

• Takagi Shinichi

  Department Of Electrical Engineering And Information Systems The University Of Tokyo

• Nakano Yoshiaki

  Department Of Electrical Engineering And Information Systems The University Of Tokyo

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