Decrease in Deposition Rate and Improvement of Step Coverage by CF_4 Addition to Plasma-Enhanced Chemical Vapor Deposition of Silicon Oxide Films

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概要

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• The low dielectric constant of F-doped silicon dioxide film makes it suitable for use as an intermetal film to improve the performance of ultra-large scale integrated circuits (ULSIs). One of the properties required by an intermetal film is good gap filling. It is known that fluorine addition to sillicon oxide decreases the film deposition rate and improves the step coverage. In order to investigate these phenomena, we study the reaction mechanism of plasma-enhanced chemical vapor deposition (PECVD) silicon oxide film and its change by fluorine addition. Using a two film-forming species model, we explain the dependence of the deposition rate and the step coverage on the residence time for a SiH_4/N_2O-based PECVD system. The precursor produced by the dissociation of SiH_4 has a relatively high sticking probability (≈0.5), while an intermediate species has a low (<10^<-4>) sticking probability. The concentration of each species for deposition is changed by the residence time of the gas, thus the deposition rate and the step coverage show dependence on the residence time. The deposition rate of silicon oxide films is decreased and the step coverage is improved by CF_4 addition during SiH_4/N_2O-based PECVD. From the estimation of the sticking probability, we suggest that the reason for the improvement of the step coverage by fluorine addition is not the etching effect by CF_4 addition, but the decrease in sticking probability of the precursor produced by the dissociation of SiH_4.

• 社団法人応用物理学会の論文
• 2000-01-15

著者

• NAKANO Yoshiaki

  Department of Surgery, NTT West Osaka Hospital

• Lim S

  Advanced Products Res. And Dev. Lab. Tx Usa

• Lim Sang

  Department Of Chemical System Engineering University Of Tokyo:(present Address)department Of Electri

• TADA Kunio

  Department of Electronic Engineering, The University of Tokyo

• SHIMOGAKI Yukihiro

  Department of Materials Engineering, The University of Tokyo

• 多田 邦雄

  金沢工業大学大学院

• Tada Kunio

  Department Of Electronic Engineering Faculty Of Engineering University Of Tokyo

• Nakano Yoshiaki

  Research Center For Advanced Science And Technology Univ. Of Tokyo

• Nakano Yoshiaki

  Graduate School Of Engineering The University Of Tokyo

• Nakano Y

  Research Center For Advanced Science And Technology The University Of Tokyo

• KOMIYAMA Hiroshi

  Department of Chemical System Engineering, The University of Tokyo

• Nakano Yoshiaki

  Department Of Surgery Ntt West Osaka Hospital

• Shimogaki Yukihiro

  Department Of Materials Engineering Faculty Of Engineering Univerity Of Tokyo

• Komiyama H

  Department Of Chemical System Engineering School Of Engineering University Of Tokyo

• Komiyama Hiroshi

  Department Of Chemical Engineering Faculty Of Engineering University Of Tokyo

• Shimogaki Y

  Department Of Materials Engineering School Of Engineering The University Of Tokyo

• Lim Sang

  Department Of Chemical Engineering Sungkyunkwan University

• Nakano Yoshiaki

  Department Of Electrical Engineering And Information Systems The University Of Tokyo

• Tada Kunio

  Department Of Electronic Engineering Faculty Of Engineering The University Of Tokyo

• Takizawa Kuniharu

  Broadcasting Science Resarch Laboratories Hnk(japan Broadcasting Corporation)

• Lim Sang

  Department Of Anesthesiology And Pain Medicine Korea University Guro Hospital

• Shimogaki Yukihiro

  Department of Electronic Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan

• Nakano Yukie

  Research Center for Advanced Science and Technology, The University of Tokyo

• Shimogaki Yukihiro

  Department of Chemical System Engineering, Faculty of Engineering, University of Tokyo,

• SHIMOGAKI YUKIHIRO

  Department of Chemical Engineering, University of Tokyo

• Tada Kunio

  Department of Electrical and Computer Engineering, Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan

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