Dislocation-Free InGaAs on Si(111) Using Micro-Channel Selective-Area Metalorganic Vapor Phase Epitaxy
スポンサーリンク
概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2009-01-25
著者
-
TAKAGI Hideki
National Institute of Advanced Industrial Science and Technology
-
YAMAMOTO Takahisa
Department of Advanced Materials Science, Graduate School of Frontier Science, The University of Tok
-
NAKANO Yoshiaki
Department of Surgery, NTT West Osaka Hospital
-
Takagi Hideki
National Inst. Of Advanced Industrial Sci. And Technol.
-
IKUHARA Yuichi
Institute of Engineering Innovation, University of Tokyo
-
SUGIYAMA Masakazu
Department of Electronic Engineering, School of Engineering, University of Tokyo
-
Nakano Yoshiaki
Research Center For Advanced Science And Technology Univ. Of Tokyo
-
Sugiyama Masaaki
R & D Laboratories-i Central R & D Bureau Nippon Steel Cotporation
-
Sugiyama Masaaki
Advanced Materials & Technology Research Laboratories Nippon Steel Corporation
-
Yamamoto Takahisa
Department Of Advance Materials Science School Of Frontier Sciences The University Of Tokyo
-
Sugiyama M
Department Of Electric Engineering And Information Systems School Of Engineering The University Of T
-
Sugiyama Munehiro
Ntt Interdisciplinary Research Laboratories
-
Nakano Y
Research Center For Advanced Science And Technology The University Of Tokyo
-
Ikuhara Yuichi
Institute Of Engineering Innovation School Of Engineering The University Of Tokyo
-
TAKENAKA Mitsuru
Department of Electrical Engineering and Information Systems, The University of Tokyo
-
TAKAGI Shinichi
Department of Electrical Engineering and Information Systems, The University of Tokyo
-
DEURA Momoko
Department of Electrical Engineering and Information Systems, School of Engineering, The University
-
HOSHII Takuya
Department of Electrical Engineering and Information Systems, School of Engineering, The University
-
Nakano Yoshiaki
Department Of Surgery Ntt West Osaka Hospital
-
Deura Momoko
Department Of Electrical Engineering And Information Systems School Of Engineering The University Of
-
Takenaka Mitsuru
Department Of Electrical Engineering And Information Systems School Of Engineering The University Of
-
Sugiyama Masakazu
Department Of Biotechnology Graduate School Of Agriculture And Life Sciences The University Of Tokyo
-
Takagi Shinichi
Department Of Electrical Engineering And Information Systems The University Of Tokyo
-
Nakano Yoshiaki
Department Of Electrical Engineering And Information Systems The University Of Tokyo
-
IKUHARA Yuichi
Institute of Engeering Innovation, School of Engineering, The University of Tokyo
-
Deura Momoko
Department of Applied Physics, Faculty of Science, Tokyo University of Science, Katsushika, Tokyo 125-8585, Japan
関連論文
- Non-linear Current-Voltage Property across Σ5(210) Symmetric Tilt Boundary in Nb-Doped SrTiO_3 Bicrystal
- Current-Voltage Characteristics Across Small Angle Symmetric Tilt Boundaries in Nb-Doped SrTiO_3 Bicrystals
- Micro Gas Preconcentrator Made of a Film of Single-Walled Carbon Nanotubes
- GeO_2-doping Dependence of High Temperature Superplastic Behavior in 3Y-TZP
- Importance of the Retro-Mammary Space as a Route of Breast Cancer Metastasis
- Histologic Examination of Two Cases of Cystosarcoma Phyllodes with Pulmonary Metastases
- Identification of Pathologic Parathyroid Glands in Patients with Primary Hyperparathyroidism
- Improved Etched Surface Morphology in Electron Cyclotron Resonance-Reactive Ion Etching of GaN by Cyclic Injection of CH_4/H_2/Ar and O_2 with Constant Ar Flow
- Al/Al-Si Nano-Composite Graded Coating Prepared by Supersonic Free-Jet PVD
- Ti-Al, Graded Al/AlTi, and Ti-Al-N Coatings Prepared by Supersonic Free-Jet PVD
- Graded TiN Coating by Supersonic Free-Jet PVD Combined with Reactive Plasma
- Strong Bxciton Absorption Peak Enhancement without Redshift of Absorption Edge in Al_Ga_As/GaAs Five-Step Asymmetric Coupled Quantum Well with Modified Potential
- Surface Reaction Kinetics in Metalorganic Vapor Phase Epitaxy of GaAs through Analyses of Growth Rate Profile in Wide-Gap Selective-Area Growth
- Comparison of Organic and Hydride Group V Precursors in Terms of Surface Kinetics in Wide-Gap Selective Area Metalorganic Vapor Phase Epitaxy
- Electron Cyclotron Resonance-Reactive Ion Beam Etching of InP by Cyclic Injection of CH_4/H_2/Ar and O_2(Semiconductors)
- Oxygen Pipe Diffusion in Sapphire Basal Dislocation(Characterization,Guest Editors Dedicated to Prof. Gunter Petzow: Modern Trends in Advanced Ceramics)
- Optimization of Polysilane Structure as Fast-Etching Bottom Antireflective Coating for Deep Ultraviolet Lithography
- Monolithically Integrated InGaN-Based Multicolor Light-Emitting Diodes Fabricated by Wide-Stripe Selective Area Metal-Organic Vapor Phase Epitaxy
- Optical and Structural Characterization of InGaN/GaN Multiple Quantum Wells by Epitaxial Lateral Overgrowth
- Intersubband Transition at 1.52μm in GaN/AlN Multiple Quantum Wells Grown by Metal Organic Vapor Phase Epitaxy
- Fabrication of Abrupt AlN/GaN Multi Quantum Wells by Low Temperature Metal Organic Vapor Phase Epitaxy
- Kinetic Analysis of InN Selective Area Metal-Organic Vapor Phase Epitaxy
- Fabrication of AlGaN-Based Waveguides by Inductively Coupled Plasma Etching
- Atomic and Electronic Structures of Ni/YSZ(111) Interface
- LAPAROSCOPIC TREATMENT FOR PERFORATED APPENDICITIS WITH PELVIC ABSCESS
- Efficacy of Absorbable Clips Compared with Metal Clips for Cystic Duct Ligation in Laparoscopic Cholecystectomy
- Laparoscopic Wedge Resection for Gastric Perforation After Endoscopic Mucosal Resection : Report of a Case
- Solitary Splenic Metastasis from Ovarian Cancer Successfully Treated by Hand-Assisted Laparoscopic Splenectomy : Report of a Case
- The Usefulness, Indications, and Complications of Laparoscopy-Assisted Colectomy in Comparison with Those of Open Colectomy for Colorectal Carcinoma
- Structures and Electrical Properties of β- and θ-(BTM-TTP)_2SbF_6
- Formation of Protection Layer during Oxidation of Al-Implanted TiN Coating
- High Temperature Deformation Behavior of [0001] Symmetrical Tilt Σ7 and Σ21 Grain Boundaries in Alumina Bicrystals
- First-Principles Characterization of Atomic Structure of Al_2O_3(0001)/Cu Nano-Hetero Interface
- Structure of [110] tilt grain boundaries in zirconia bicrystals
- Thermoelectric Properties of the Layered Cobaltite Ca_3Co_4O_9 Epitaxial Films Fabricated by Topotactic Ion-Exchange Method
- Atomic Structure and Relaxation Behavior at AlN(0001)/Al_2O_3(0001) Interface(Characterization,Guest Editors Dedicated to Prof. Gunter Petzow: Modern Trends in Advanced Ceramics)
- First Principles Calculations of Vacancy Formation Energies in *13 Pyramidal Twin Grain Boundary of α-Al_2O_3
- Structure and Configuration of Boundary Dislocations on Low Angle Tilt Grain Boundaries in Alumina
- First Principles Study on Intrinsic Vacancies in Cubic and Orthorhombic CaTiO_3
- Transmission Electron Microscopy Study of Sn-Doped Sintered Indium Oxide
- Application of Organic Silicon Clusters to Pattern Transfer Process for Deep UV Lithography
- 15-O-08 HRTEM Characterization of Atomic Structures in Cu/α-Al_2O_3 Interfaces
- High-Resolution Transmission Electron Microscopy Observation of Liquid-Phase Bonded Aluminum/Sapphire Interfaces
- Structural Changes in Ba(Sr_Ta_)O_3-Type Perovskite Compounds upon Tilting of Oxygen Octahedra
- Anomaly in the Infrared Active Phonon Modes and Its Relationship to the Dielectric Constant of (Ba_Sr_x)(Mg_Ta_)O_3 Compound
- Grain Boundary Energy and Tensile Ductility in Superplastic Cation-doped TZP
- High Resolution Microscopy Study for [001] Symmetric Tilt Boundary with a Tilt Angle of 66゜in Rutile-type TiO_2 Bicrystal
- GaN-Based High-Speed Intersubband Optical Switches
- Influence of Wavelength Detuning on Device Performance of Electroabsorption Modulator Integrated Distributed Feedback Lasers Based on Identical Epitaxial Layer Approach (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Influence of Wavelength Detuning on Device Performance of Electroabsorption Modulator Integrated Distributed Feedback Lasers Based on Identical Epitaxial Layer Approach (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Ultrathin body InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors with InP passivation layers on Si substrates fabricated by direct wafer bonding
- Diffiraction Efficiency of Holographic Grating Formed in Au Nano particle-Doped Sol-Gel Silica Film by Laser Irradiation
- Thin Body III-V-Semiconductor-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Fabricated Using Direct Wafer Bonding
- InGaAsP Photonic Wire Based Ultrasmall Arrayed Waveguide Grating Multiplexer on Si Wafer
- Dislocation-Free InGaAs on Si(111) Using Micro-Channel Selective-Area Metalorganic Vapor Phase Epitaxy
- Fabrication of a Monolithically Integrated WDM Channel Selector Using Single Step Selective Area MOVPE and Its Characterization(Semiconductor Devices,Recent Advances in Integrated Photonic Devices)
- Examination of Surface Elementary Reaction Model for Chemical Vapor Deposition of Al Using In Situ Infrared Reflection Absorption Spectroscopy : Teoretical Optimization Procedure (3)
- Elementary Surface Reaction Simulation of Aluminum Chemical Vapor Deposition from Dimethylaluminumhydride Based on Ab Initio Calculations : Theoretical Process Optimization Procedure(2)
- Kinetics of GaAs Metalorganic Chemical Vapor Deposition Studied by Numerical Analysis Based on Experimental Reaction Data
- Reaction Analysis of Aluminum Chemical Vapor Deposition from Dimethyl-aluminum-hydride Using Tubular Reactor and Fourier-Transform Infrared Spectroscopy : Theoretical Process Optimization Procedure(1)
- Effect of Y-Doping on Resistance Degradation of Multilayer Ceramic Capacitors with Ni Electrodes under the Highly Accelerated Life Test
- Aging Behavior of Ni-Electrode Multilayer Ceramic Capacitors with X7R Characteristics
- Microstructure Evolutions at Severely-deformed Austenite/Martensite Interfaces of a Layer-integrated Steel
- Demonstration of All-Optical Wavelength Converter Based on Fabry-Perot Semiconductor Optical Amplifier
- Wide-Angle Coupling to Multi-Mode Interference Devices : A Novel Concept for Compacting Photonic Integrated Circuits
- Evidence of Sr-Deficiency in Bi_2Sr_Ca_1Cu_2O_8 and Preparation of Stoichiometric Semiconducting Bi_2Sr_2Ca_1Cu_2O_8
- Intergration of Terraced Laser Diode and Garnet Crystals by Wafer Direct Bonding
- Effect of Underlayers on the Morphology and Orientation of Aluminum Films Prepared by Chemical Vapor Deposition Using Dimethylaluminumhydride
- Analysis of Distributed Feedback Semiconductor Laser-Electroabsorptiorn Modulator Integrated Light Source, Including Gain-Coupled Structure
- Absorptive-Grating Gain-Coupled Distributed-Feedback MQW Lasers with Low Threshold Current and High Single-Longitudinal-Mode Yield
- InGaAs/InP Gain-Coupled Distributed Feedback Laser with a Corrugated Active Layer
- Replacements of Amino Acid Residues at Subsites and Their Effects on the Catalytic Properties of Rhizomucor pusillus Pepsin, an Aspartic Proteinase from Rhizomucor pusillus
- Formation of a Cr3+-rich luminescent thin phase along a grain boundary of α-Al2O3
- First-Principles Calculations of Co Impurities and Native Defects in ZnO
- Mechanical properties of 2.0-3.5mol% Y_2O_3-stabilized zirconia polycrystals fabricated by the solid phase mixing and sintering method
- Mechanical properties of Y_2O_3-stabilized ZrO_2 polycrystals fabricated by the solid phase mixing and sintering method
- Improvement of High-temperature Creep Resistance in Polycrystalline Al_2O_3 by Cations Co-doping
- Design and Fabrication of Monolithically Integrated Lateral-Electrode Etched-Mirror Laser with Y-Branch Single-Mode Waveguide in GaAs/AlGaAs
- Formation of High-Contrast Periodic Corrugations by Optimizing Optical Parameters of Photoresists in 325 nm Laser Holographie Exposure
- Characterization of P- and N-Type Impurity Diffusions in GaAs from Doped Silica Films
- Fabrication of TE/TM Mode Splitter Using Completely Buried GaAs/GaAlAs Waveguide
- Direct Imaging of Hydrogen within a Crystalline Environment
- Wavelength Filtering Operation in Absorptive-Grating Gain-Coupled Distributed-Feedback MQW Lasers
- Electrostatic Imprint Process for Glass
- Decrease in Deposition Rate and Improvement of Step Coverage by CF_4 Addition to Plasma-Enhanced Chemical Vapor Deposition of Silicon Oxide Films
- Preparation of Low-Dielectric-Constant F-Doped SiO2 Films by Plasma-Enhanced Chemical Vapor Deposition
- Preparation of Low Dielectric Constant F-Doped SiO_2 Films by PECVD
- Fabrication of Multiple-Electrode Chirped-Grating-Tunable Distributed-Feedback Lasers
- Fabrication and Characteristics of an Integrated DFB Laser/Amplifier Having Reactive-Ion-Etched Tilted End Facets
- Ultrathin Body InGaAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors with InP Passivation Layers on Si Substrates Fabricated by Direct Wafer Bonding
- Analysis of GaInAsP Surfaces by Contact-Angle Measurement for Wafer Direct Bonding with Garnet Crystals
- Direct Bonding between Quaternary Compound Semiconductor and Garnet Crystals for Integrated Optical Isolator
- ??/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding
- Effect of GaAs Step Layer on InGaAs/GaAsP Quantum Well Solar Cells
- Analysis of Stress in Plasma Enhanced Chemical Vapor Deposition Silicon Nitride Film Irradiated with Ultraviolet Light
- Strain-Balanced InGaAs/GaAsP Superlattice Solar Cell with Enhanced Short-Circuit Current and a Minimal Drop in Open-Circuit Voltage
- Effects of Strain on the Performance of InGaAs/GaAsP Multiple-Quantum-Well Solar Cells Correlated with In situ Curvature Monitoring
- High-efficient Chip to Wafer Self-alignment and Bonding for Flexible and Size-free MEMS-IC Integration
- III-V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding
- Numerical and Experimental Analysis of Intermittent Line-and-Space Patterns in Thermal Nanoimprint