Analysis of Stress in Plasma Enhanced Chemical Vapor Deposition Silicon Nitride Film Irradiated with Ultraviolet Light
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概要
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Plasma enhanced chemical vapor deposition (PE-CVD) silicon nitride (SiN) film was annealed with ultraviolet (UV) light for producing strained silicon. Stress increase of 700 MPa in 30-nm-thick SiN film was obtained after annealing time of 5 min using a low pressure mercury (Hg) lamp with irradiation power of 22 mW/cm2. The stress increase was found to be generated by not only the UV annealing but also thermal annealing. The behavior of stress increase can be described by a simple experimental formula including the UV and thermal annealing effects. And the stress increase in the thinner SiN film was calculated. The most useful method for obtaining larger stress increase was proposed.
- 2008-09-25
著者
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Takagi Hideki
National Inst. Of Advanced Industrial Sci. And Technol.
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Kokubun Yasuo
Yokohama National Univ. Yokohama Jpn
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Maeda Ryutaro
National Inst. Of Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Shioya Yoshimi
Nanomaterial Laboratory Co., Ltd., 1-3-7-905 Minamiyamata, Tsuzuki-ku, Yokohama 224-0029, Japan
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Kokubun Yasuo
Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
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