UV-Induced Refractive Index Change of SiN Film and Its Application to Center Wavelength Trimming of Vertically Coupled Microring Resonator Filter
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概要
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In this study, to develop an accurate center wavelength trimming, we investigated the UV-induced refractive index change of the SiN film formed by plasma-enhanced chemical vapor deposition (PECVD) method using SiH4 gas and found that the refractive index of the SiN film was largely changed by $-1.3\times 10^{-2}$ by the UV irradiation. Utilizing this phenomenon, we developed a novel center wavelength trimming using SiN as a ring core and irradiating UV laser beam. A wide range ($-12.1$ nm) of center wavelength was demonstrated and the shifted center wavelength was almost stable for more than 1200 h. A narrow channel spacing of filter array was realized by this technique.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-08-15
著者
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Kokubun Yasuo
Yokohama National Univ. Yokohama Jpn
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Haeiwa Hirofumi
Yokohama National University Graduate School Of Engineering Department Of Electrical And Computer En
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Naganawa Toshiki
Yokohama National University, Graduate School of Engineering, Department of Electrical and Computer Engineering, 79-5 Tokiwadai, Hodogayaku, Yokohama 240-8501, Japan
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Haeiwa Hirofumi
Yokohama National University, Graduate School of Engineering, Department of Electrical and Computer Engineering, 79-5 Tokiwadai, Hodogayaku, Yokohama 240-8501, Japan
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Kokubun Yasuo
Yokohama National University, Graduate School of Engineering, Department of Electrical and Computer Engineering, 79-5 Tokiwadai, Hodogayaku, Yokohama 240-8501, Japan
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